S vacancies in 2D SnS2 accelerating hydrogen evolution reaction
Source abstract
Abstract
精确调控二维平面内的原子缺陷可有效调节二维材料的各种基本性质. 本研究通过改变退火温度(250–350°C), 实现了二维二硫化锡(SnS2)基面上硫(S)原子的精确敲除, 得到了具有不同S空位浓度的SnS2(Vs−SnS2). 当SnS2 在350°C下退火5 h时, 大量出现单S原子和双S原子空位形态, S空位浓度可达30.5%. 在自制微芯片中测试Vs−SnS2的电催化析氢性能. S空位浓度达到30.5%的Vs−SnS2表现出优异的催化性能, Tafel斜率达到74 mV dec−1, 起始电位低至141 mV. 通过理论计算对反应机制进行研究, 结果表明, S原子的缺失促进了表面电荷调制, 提高了SnS2的导电性. 此外, S空位导致Sn原子的不饱和配位, 从而引起晶格畸变和电荷密度重新分布, 更加有利于析氢反应. 简而言之, 通过控制退火温度可精确敲除特定原子、制造缺陷, 可成为探索各种2D材料结构相关特性的一种有效策略.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electrocatalysts for Energy Conversion · Advanced Photocatalysis Techniques · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
Show source-provided references
1. Shao G, Lu Y, Hong J, et al. Seamlessly splicing metallic SnxMo1−xS2 at MoS2 edge for enhanced photoelectrocatalytic performance in microreactor. Adv Sci, 2020, 7: 200217210.1002/advs.202002172 ↗
2. Schulman DS, Arnold AJ, Das S. Contact engineering for 2D materials and devices. Chem Soc Rev, 2018, 47: 3037–305810.1039/C7CS00828G ↗
3. Xu Y, Jiang X, Shao G, et al. Interface effect of Ru−MoS2 nanoflowers on lignin substrate for enhanced hydrogen evolution activity. Energy Environ Mater, 2021, 4: 117–12510.1002/eem2.12104 ↗
4. Alzakia FI, Tan SC. Liquid-exfoliated 2D materials for optoelectronic applications. Adv Sci, 2021, 8: 200386410.1002/advs.202003864 ↗
5. Guo HW, Hu Z, Liu ZB, et al. Stacking of 2D materials. Adv Funct Mater, 2021, 31: 200781010.1002/adfm.202007810 ↗
6. Su L, Fan X, Yin T, et al. Inorganic 2D luminescent materials: Structure, luminescence modulation, and applications. Adv Opt Mater, 2020, 8: 190097810.1002/adom.201900978 ↗
7. Wang X, Zhang Y, Si H, et al. Single-atom vacancy defect to trigger high-efficiency hydrogen evolution of MoS2. J Am Chem Soc, 2020, 142: 4298–430810.1021/jacs.9b12113 ↗
8. Xiong J, Di J, Xia J, et al. Surface defect engineering in 2D nanomaterials for photocatalysis. Adv Funct Mater, 2018, 28: 180198310.1002/adfm.201801983 ↗
9. Loh L, Zhang Z, Bosman M, et al. Substitutional doping in 2D transition metal dichalcogenides. Nano Res, 2021, 14: 1668–168110.1007/s12274-020-3013-4 ↗
10. Li W, Qian X, Li J. Phase transitions in 2D materials. Nat Rev Mater, 2021, 6: 829–84610.1038/s41578-021-00304-0 ↗
11. Xu X, Pan Y, Liu S, et al. Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2. Science, 2021, 372: 195–20010.1126/science.abf5825 ↗
12. Stark MS, Kuntz KL, Martens SJ, et al. Intercalation of layered materials from bulk to 2D. Adv Mater, 2019, 31: 180821310.1002/adma.201808213 ↗
13. Shao G, Xue XX, Zhou X, et al. Shape-engineered synthesis of atomically thin 1T-SnS2 catalyzed by potassium halides. ACS Nano, 2019, 13: 8265–827410.1021/acsnano.9b03648 ↗
14. Zhang L, Tang Y, Khan AR, et al. 2D materials and heterostructures at extreme pressure. Adv Sci, 2020, 7: 200269710.1002/advs.202002697 ↗
15. Wang X, Pan L, Yang J, et al. Direct synthesis and enhanced rectification of alloy-to-alloy 2D type-II MoS2(1−x)Se2x/SnS2(1−y)Se2y heterostructures. Adv Mater, 2021, 33: 200690810.1002/adma.202006908 ↗
16. Xu X, Han B, Liu S, et al. Atomic-precision repair of a few-layer 2H-MoTe2 thin film by phase transition and recrystallization induced by a heterophase interface. Adv Mater, 2020, 32: 200023610.1002/adma.202000236 ↗
17. Hu D, Zhao T, Ping X, et al. Unveiling the layer-dependent catalytic activity of PtSe2 atomic crystals for the hydrogen evolution reaction. Angew Chem Int Ed, 2019, 58: 6977–698110.1002/anie.201901612 ↗
18. Cui F, Wang C, Li X, et al. Tellurium-assisted epitaxial growth of large-area, highly crystalline ReS2 atomic layers on mica substrate. Adv Mater, 2016, 28: 5019–502410.1002/adma.201600722 ↗
19. Shi R, Zhao Y, Waterhouse GIN, et al. Defect engineering in photocatalytic nitrogen fixation. ACS Catal, 2019, 9: 9739–975010.1021/acscatal.9b03246 ↗
20. Xie J, Yang X, Xie Y. Defect engineering in two-dimensional electrocatalysts for hydrogen evolution. Nanoscale, 2020, 12: 4283–429410.1039/C9NR09753H ↗
21. Shao G, Xue Xx, Wu B, et al. Template-assisted synthesis of metallic 1T′-Sn0.3W0.7S2 nanosheets for hydrogen evolution reaction. Adv Funct Mater, 2020, 30: 190606910.1002/adfm.201906069 ↗
22. Zheng YJ, Chen Y, Huang YL, et al. Point defects and localized excitons in 2D WSe2. ACS Nano, 2019, 13: 6050–605910.1021/acsnano.9b02316 ↗
23. Liang Q, Zhang Q, Gou J, et al. Performance improvement by ozone treatment of 2D PdSe2. ACS Nano, 2020, 14: 5668–567710.1021/acsnano.0c00180 ↗
24. Zhang P, Xiang H, Tao L, et al. Chemically activated MoS2 for efficient hydrogen production. Nano Energy, 2019, 57: 535–54110.1016/j.nanoen.2018.12.045 ↗
25. Xu J, Lai S, Hu M, et al. Semimetal 1H-SnS2 enables high-efficiency electroreduction of CO2 to CO. Small Methods, 2020, 4: 200056710.1002/smtd.202000567 ↗
26. Wang P, Song S, Najafi A, et al. High-fidelity transfer of chemical vapor deposition grown 2D transition metal dichalcogenides via substrate decoupling and polymer/small molecule composite. ACS Nano, 2020, 14: 7370–737910.1021/acsnano.0c02838 ↗
27. Wakafuji Y, Moriya R, Masubuchi S, et al. 3D manipulation of 2D materials using microdome polymer. Nano Lett, 2020, 20: 2486–249210.1021/acs.nanolett.9b05228 ↗
28. Kim K, Yankowitz M, Fallahazad B, et al. Van der Waals heterostructures with high accuracy rotational alignment. Nano Lett, 2016, 16: 1989–199510.1021/acs.nanolett.5b05263 ↗
29. Wang W, Zhou L, Hu S, et al. Visualizing piezoelectricity on 2D crystals nanobubbles. Adv Funct Mater, 2021, 31: 200505310.1002/adfm.202005053 ↗
30. Shao G, Xue XX, Liu X, et al. Twist angle-dependent optical responses in controllably grown WS2 vertical homojunctions. Chem Mater, 2020, 32: 9721–972910.1021/acs.chemmater.0c03413 ↗
31. Ye G, Gong Y, Lei S, et al. Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition. Nano Res, 2017, 10: 2386–239410.1007/s12274-017-1436-3 ↗
32. Zhang X, Liao Q, Kang Z, et al. Hidden vacancy benefit in monolayer 2D semiconductors. Adv Mater, 2021, 33: 200705110.1002/adma.202007051 ↗
33. Bai F, Xu L, Zhai X, et al. Vacancy in ultrathin 2D nanomaterials toward sustainable energy application. Adv Energy Mater, 2020, 10: 190210710.1002/aenm.201902107 ↗
34. Gong Y, Yuan H, Wu CL, et al. Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics. Nat Nanotech, 2018, 13: 294–29910.1038/s41565-018-0069-3 ↗
35. Jin H, Li L, Liu X, et al. Nitrogen vacancies on 2D layered W2N3: A stable and efficient active site for nitrogen reduction reaction. Adv Mater, 2019, 31: 190270910.1002/adma.201902709 ↗
36. Wang Z, Li Q, Xu H, et al. Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites. Nano Energy, 2018, 49: 634–64310.1016/j.nanoen.2018.04.067 ↗
37. Deng D, Novoselov KS, Fu Q, et al. Catalysis with two-dimensional materials and their heterostructures. Nat Nanotech, 2016, 11: 218–23010.1038/nnano.2015.340 ↗
38. Ge J, Zheng JY, Zhang J, et al. Controllable atomic defect engineering in layered NixFe1−x(OH)2 nanosheets for electrochemical overall water splitting. J Mater Chem A, 2021, 9: 14432–1444310.1039/D1TA02188E ↗
39. Greeley J, Jaramillo TF, Bonde J, et al. Computational high-throughput screening of electrocatalytic materials for hydrogen evolution. Nat Mater, 2006, 5: 909–91310.1038/nmat1752 ↗