journal article·2026-07-03

An in-situ oxidation routine for reliable low-voltage 2D FeFETs

Chao Zhou, Zhihao Yu, Xinran Wang

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Abstract

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Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Magnetic properties of thin films · Semiconductor materials and devices

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References (10)

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1. Cao W, Bu H, Vinet M, et al. The future transistors. Nature, 2023, 620: 501–51510.1038/s41586-023-06145-x ↗
2. Liu Y, Tang W, Zeng J, et al. Ferroelectric-based neuromorphic memory devices for bio-inspired computing. Nat Rev Electr Eng, 2025, 2: 773–78710.1038/s44287-025-00222-1 ↗
3. Zhou C, Feng Y, Ma L, et al. Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design. Nat Commun, 2025, 16: 759310.1038/s41467-025-63048-3 ↗
4. Skidmore CH, Spurling RJ, Hayden J, et al. Proximity ferroelectricity in wurtzite heterostructures. Nature, 2025, 637: 574–57910.1038/s41586-024-08295-y ↗
5. Qiu H, Yu Z, Zhao T, et al. Two-dimensional materials for future information technology: status and prospects. Sci China Inf Sci, 2024, 67: 16040010.1007/s11432-024-4033-8 ↗
6. Kim K, Kuzumoto Y, Jung C, et al. Intrinsically stretchable 2D MoS2 transistors. Nat Commun, 2026, 17: 179610.1038/s41467-026-68504-2 ↗
7. Jayachandran D, Sakib NU, Das S. 3D integration of 2D electronics. Nat Rev Electr Eng, 2024, 1: 300–31610.1038/s44287-024-00038-5 ↗
8. Zou T, Heo S, Reo Y, et al. Flexible monolithic 3D complementary circuits based on 2D semiconductor inks. Nat Commun, 2025, 16: 1134710.1038/s41467-025-66419-y ↗
9. Wu Q, Li Z, Han B, et al. Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide. Science, 2026, 391: eadz165510.1126/science.adz1655 ↗
10. Khan AI, Keshavarzi A, Datta S. The future of ferroelectric field-effect transistor technology. Nat Electron, 2020, 3: 588–59710.1038/s41928-020-00492-7 ↗