Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface
Source abstract
Abstract
在Si衬底上将单晶GaAs薄膜与其进行异质集成有望为硅基光电 集成提供新的材料平台. 本文基于对GaAs材料剥离机理的分析阐述, 优 化了GaAs薄膜转移工艺的离子注入条件. 结果表明, 相比于He离子单 独注入, 由于较小的热预算和注入后相对更低的缺陷密度, He/H离子 共注入对于GaAs薄膜转移更高效. 以Al2O3为键合介质层, 通过优化的 离子剥离技术成功地将4英寸GaAs薄膜转移到Si(100)衬底上. 探索了包 括化学机械抛光、臭氧辐照氧化和KOH清洗的表面处理工艺, 以将转 移后GaAs薄膜的表面质量提高到可以高质量外延的水平. 在400°C退 火1 h后, 转移的GaAs薄膜单晶质量进一步提高, X射线摇摆曲线的半 峰全宽仅为89.03 arcsec.
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Research context
OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces
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References (32)
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