Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance
Source abstract
Abstract
The negative differential capacitance (NDC) effect is observed on a titanium-oxide-silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approximately six to eight electrons can be trapped in the valence band states of Ge QDs. We explain the NDC effect in terms of the emission of electrons from valence band states in the very narrow QD layer under reverse bias.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, A-4040 Linz, Austria
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
Institute for Physics of Microstructures RAS, Nizhniy Novgorod, Russia
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