The electronic structure of ε-Ga2O3
Source abstract
Abstract
The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states.
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Research context
OpenAlex topics: Ga2O3 and related materials · Electronic and Structural Properties of Oxides · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institut für Physik, Humboldt-Universität zu Berlin 1 , Newtonstr. 15, D-12489 Berlin, Germany
Leibniz-Institut für Kristallzüchtung 2 , Max-Born-Str. 2, D-12489 Berlin, Germany
IHP 3 , Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
CNR-ISM 4 , Via Salaria km 29,300, I-00015 Monterotondo Stazione (Rome), Italy
Department of Physics, Cagliari University 5 , I-09042 Monserrato (CA), Italy
CNR-IOM, UOS Cagliari University 6 , I-09042 Monserrato (CA), Italy
Department of Mathematical, Physical and Computer Sciences, Parma University 7 , Viale delle Scienze 7/A, I-43124 Parma, Italy
CNR, Institute of Electronic and Magnetic Materials 8 , Viale delle Scienze 37/A, I-43124 Parma, Italy
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