Influence of Ga back grading on voltage loss in low‐temperature co‐evaporated Cu(In,Ga)Se2 thin film solar cells

Abstract The performance of Cu(In,Ga)Se₂(CIGS) solar cells is limited by the presence of the highly recombinative CIGS/Mo interface. The recombination at the CIGS/Mo interface is influential for the open circuit voltage (V_OC) in high quality CIGS absorbers with increased charge carriers diffusion length. A quantitative understanding of the role of the Ga back grading height (ΔGGI) in suppressing back interface recombination is needed. In this work, we take advantage of a low temperature process to modify theΔGGI while keeping the composition in the notch and front regions almost unchanged. Improvement in bothV_OCdeficit and time‐resolved photoluminescence lifetime are observed with increasingΔGGI. With a combination of back surface modification experiments and numerical simulations, we quantify a voltage loss in ungraded devices of approximately 100 mV solely from the back interface recombination. Nice agreement between simulation and experimental data is reached while constraining the values of possible diffusion lengths. Our results suggest that aΔGGI of about 0.50 is required to effectively suppress the back interface recombination, highlighting the importance of grading control in high‐performance CIGS solar cells and devices.