Tunneling transport of mono- and few-layers magnetic van der Waals MnPS3
Source abstract
Abstract
We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm.
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Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Molecular Junctions and Nanostructures
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Basic Science 1 Center for Correlated Electron Systems, , Seoul 08826, South Korea
Seoul National University 2 Department of Physics and Astronomy, , Seoul 08826, South Korea
Konkuk University 3 Department of Physics, , Seoul 05029, South Korea
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