Hydrogenated and halogenated MB (M=As, Sb and Bi) monolayers: Structural, electronic, optical and topological properties by first principles calculations
Source abstract
Abstract
Abstract The electronic and optical properties of the functionalization of MB (M = As, Sb and Bi) by hydrogen and halogen atoms, namely MBX2 are investigated by first principles calculations. The analysis of the phonon spectra show that all the structures are dynamically stable. The electronic structures indicate that AsBH2 and SbBH2 are suitable catalyst for water splitting, while, BiBI2 and BiBBr2 are intrinsic 2D topological insulators with a large gap of 0.43 eV. Interestingly, BiBCl2, BiBH2, SbBBr2, AsBBr2, SbBCl2 and AsBCl2 monolayers can transform trivial to nontrivial phases under the tensile strain of 2, 10, 10, 12, 14 and 18%, respectively. This work indicates that the functionalized groups can effectively broaden the applications of MBX2 for water splitting and good topological insulators by tuning the band gaps and the band edges under tensile strains.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (74)
Show source-provided references
1. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
2. Two-dimensional gas of massless Dirac fermions in graphene10.1038/nature04233 ↗
3. Silicene: compelling experimental evidence for graphene like two-dimensional silicon10.1103/PhysRevLett.108.155501 ↗
4. Epitaxial growth of two-dimensional stanene10.1038/nmat4384 ↗
5. Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene10.1088/1367-2630/16/9/095002 ↗
6. Synthesis of borophenes: anisotropic, two-dimensional boron polymorphs10.1126/science.aad1080 ↗
7. Electronic and magnetic properties of honeycomb transition metal monolayers: first-principles insights10.1039/C4CP01512F ↗
8. Phosphorene: an unexplored 2D semiconductor with a high hole mobility10.1021/nn501226z ↗
9. Designing electrical contacts to MoS2 monolayers: a computational study10.1103/PhysRevLett.108.156802 ↗
10. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS210.1103/PhysRevB.83.245213 ↗
11. Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers10.1039/c1cp21159e ↗
12. Atomically thin arsenene and antimonene: semimetal–semiconductor and indirect–direct band-gap transitions10.1002/ange.201411246 ↗
13. Progress, challenges, and opportunities in two-dimensional materials beyond graphene10.1021/nn400280c ↗
14. Epitaxial graphene10.1016/j.ssc.2007.04.023 ↗
15. Graphene photonics, plasmonics, and broadband optoelectronic devices10.1021/nn300989g ↗
16. Direct band gaps in group IV-VI monolayer materials: binary counterparts of phosphorene10.1103/PhysRevB.93.125428 ↗
17. Structural and electronic properties of monolayer group III monochalcogenides10.1103/PhysRevB.95.115409 ↗
18. Computational discovery of single-layer III-V materials10.1103/PhysRevB.87.165415 ↗
19. Monolayer honeycomb structures of group-IV elements and III-V binary compounds: first-principles calculations10.1103/PhysRevB.80.155453 ↗
20. Topological insulators with inversion symmetry10.1103/PhysRevB.76.045302 ↗
21. The quantum spin Hall effect and topological insulators10.1063/1.3293411 ↗
22. Colloquium: topological insulators10.1103/RevModPhys.82.3045 ↗
23. Equivalent expression ofZ2topological invariant for band insulators using the non-Abelian Berry connection10.1103/PhysRevB.84.075119 ↗
24. Classification of topological quantum matter with symmetries10.1103/RevModPhys.88.035005 ↗
25. Quantum spin-quantum anomalous hall insulators and topological transitions in functionalized Sb(111) monolayers10.1021/acs.nanolett.5b01373 ↗
26. Topological phases in double layers of bismuthene and antimonene10.1088/1361-6528/aa825f ↗
27. First-principles prediction on bismuthylene monolayer as a promising quantum spin Hall insulator10.1039/C7NR01992K ↗
28. Tuning topological edge states of Bi(111) bilayer film by edge adsorption10.1021/nl5009212 ↗
29. Recent progress in 2D group-VA semiconductors: from theory to experiment
30. Antimonene oxides: emerging tunable direct bandgap semiconductor and novel topological insulator10.1021/acs.nanolett.7b00297 ↗
31. Electronic and optical properties of vacancy defects in single-layer transition metal dichalcogenides10.1103/PhysRevB.95.245435 ↗
32. Structural, electronic and photocatalytic properties of atomic defective BiI3 monolayers10.1016/j.cplett.2017.11.044 ↗
33. Two-dimensional halide perovskites: tuning electronic activities of defects10.1021/acs.nanolett.6b00964 ↗
34. Exploring atomic defects in molybdenum disulphide monolayers10.1038/ncomms7293 ↗
35. Biaxial strain effect on electronic structure tuning in antimonene-based van der Waals in antimonene-based van der Waals10.1039/C6RA21781H ↗
36. Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain10.1103/PhysRevB.93.245303 ↗
37. Hydrogenated arsenenes as planar magnet and Dirac material
38. Fluorinated derivatives of sp 2 graphene allotropes: structure, stability, and electronic properties10.1016/j.cplett.2012.07.024 ↗
39. Fluorographynes: stability, structural and electronic properties10.1016/j.spmi.2012.11.022 ↗
40. Large-gap quantum spin Hall insulators in tin films10.1103/PhysRevLett.111.136804 ↗
41. Quantum anomalous Hall and quantum spin-Hall phases in flattened Bi and Sb bilayers10.1038/srep08426 ↗
42. Low-energy effective Hamiltonian for giant-gap quantum spin Hall insulators in honeycomb X -hydride/halide ( X = N – Bi ) monolayers
43. Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH310.1038/srep07297 ↗
44. Functionalized germanene as a prototype of large-gap two-dimensional topological insulators10.1103/PhysRevB.89.115429 ↗
45. Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X=H, F, Cl and Br) monolayers with a record bulk band gap10.1038/am.2014.113 ↗
46. Robust two-dimensional topological insulators in methyl-functionalized bismuth, antimony, and lead bilayer films10.1021/nl504037u ↗
47. Functionalized bismuth films: giant gap quantum spin Hall and valley-polarized quantum anomalous Hall states10.1103/PhysRevB.91.041303 ↗
48. Tuning band inversion symmetry of buckled III-Bi sheets by halogenation10.1088/0957-4484/27/5/055704 ↗
49. Gallium bismuth halide GaBi-X2 (X = I, Br, Cl) monolayers with distorted hexagonal framework: novel room-temperature quantum spin Hall insulators10.1007/s12274-017-1464-z ↗
50. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
51. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
52. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
53. Improved adsorption energetics within density-functional theory using revised Perdew-Burke-Ernzerhof functionals10.1103/PhysRevB.59.7413 ↗
54. Special points for brillouin-zone integrations10.1103/PhysRevB.13.5188 ↗
55. Erratum: “Hybrid functionals based on a screened Coulomb potential”10.1063/1.1564060 ↗
56. First-principles calculations of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at high pressures10.1103/PhysRevB.78.134106 ↗
57. Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory10.1103/PhysRevB.55.10355 ↗
58. Phonons and related crystal properties from density-functional perturbation theory10.1103/RevModPhys.73.515 ↗
59. wannier90: a tool for obtaining maximally-localised Wannier functions10.1016/j.cpc.2007.11.016 ↗
60. WannierTools: an open-source software package for novel topological materials10.1016/j.cpc.2017.09.033 ↗
61. Prediction of large-gap two-dimensional topological insulators consisting of bilayers of group III elements with Bi10.1021/nl500206u ↗
62. Two-dimensional antimonene single crystals grown by van der Waals epitaxy10.1038/ncomms13352 ↗
63. Epitaxial growth and air-stability of monolayer antimonene on PdTe2
64. Mechanical isolation of highly stable antimonene under ambient conditions10.1002/adma.201602128 ↗
65. Bismuth–indium two-dimensional compounds on Si (111) surface10.1016/j.susc.2016.03.031 ↗
66. Synthesis of two-dimensional Tl x Bi 1− x compounds and Archimedean encoding of their atomic structure10.1038/srep19446 ↗
67. Formation of graphane and partially hydrogenated graphene by electron irradiation of adsorbates on graphene10.1016/j.carbon.2010.03.010 ↗
68. Tuning of the electronic and optical properties of single-layer boron nitride by strain and stress10.1016/j.diamond.2016.05.005 ↗
69. Electronic and optical properties of h-BN nanosheet: a first principles calculation10.1016/j.diamond.2015.07.008 ↗
70. A first-principles study on alkaline earth metal atom substituted monolayer boron nitride (BN)10.1039/C7TC02894F ↗
71. Design of narrow-gap TiO 2: a passivated codoping approach for enhanced photoelectrochemical activity10.1103/PhysRevLett.102.036402 ↗
72. The absolute energy positions of conduction and valence bands of selected semiconducting minerals10.2138/am-2000-0416 ↗
73. Enhanced photoelectrochemical performance of rutile TiO2 by Sb-N donor-acceptor coincorporation from first principles calculations10.1063/1.3662968 ↗
74. Solar water splitting cells10.1021/cr1002326 ↗