Simultaneous improvement of piezoelectric and magnetic properties in diamagnetic ion modified BiFeO3 film

Abstract Multiferroic B i F e O 3 (BFO) and B i 0.97 Y 0.03 F e 0.95 S c 0.05 O 3 (BYFSO) films were fabricated on FTO coated glass substrate using sol-gel spin-coating technique. Y–Sc co-doping induces the structural distortion without changing the crystal structure (rhombohedral: R3c) of BFO. The electrical and magnetic properties of co-doped film may tuned due to increase in grain and particles size. The high dielectric constant ( e r = 290 ) and low loss ( t a n δ = 0.084 ) indicates the improved insulating properties in BYFSO film. Increase in oxygen vacancy concentration in BYFSO film is explained with leakage current density, which follows Ohmic-SCLC conduction mechanism. Switching of 180 0 domains into non- 180 0 (maximum 71 0 and 109 0 type) ensures improved ferrolectric and piezoelectric properties in BYFSO film. The magnetic properties enhance significantly with saturation magnetization ( M s ), remanent magnetization ( M r ) are 9.45 e m u / c m 3 , 6.154 e m u / c m 3 respectively at coercive ( H c ) field of 0.822 kOe. Room temperature multiferroic BYFSO film with improved insulating and magnetic properties may be useful for non-volatile RRAM memory application.