Magnetic properties improvement through off time between pulses and annealing in pulse electrodeposited CoZn nanowires
Source abstract
Abstract
Abstract CoZn alloy nanowire arrays embedded in anodic aluminum oxide (AAO) template were fabricated by alternative current (ac) pulse electrodeposition. Various off times between pulses in an electrolyte with constant concentration of Co +2 and Zn +2 and acidity of 4 were employed. The effect of deposition parameters on the alloy contents, microstructures and magnetic properties of Co x Zn 1− x nanowires were studied. It is shown that, Co content increased by increasing the off time between pulses. This phenomenon enables us to fabricate Zn and Co-rich nanowires by adjusting the off time during the deposition procedure. Increasing the off time more than 200 ms increased the coercivity and squareness of CoZn nanowire arrays. A significant increase in the coercivity of CoZn nanowires was observed after annealing which was varied for the samples fabricated with different electrodeposition conditions. A coercivity of 1785 Oe was obtained for the annealed sample (a sample fabricated with 50 ms off time) from initially 240 Oe.
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Research context
OpenAlex topics: Anodic Oxide Films and Nanostructures · Electrodeposition and Electroless Coatings · Nanoporous metals and alloys
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. Sanchez-Barrigaa · J. Magn. Magn. Mater. · 2007 · 312 · 9910.1016/j.jmmm.2006.09.020 ↗
2. Remskar · Adv. Mater. · 2004 · 16 · 149710.1002/adma.200306428 ↗
3. Zaraska · Surf. Coat. Technol. · 2010 · 205 · 243210.1016/j.surfcoat.2010.09.038 ↗
4. Atalay · J. Alloys Compd. · 2009 · 469 · 45810.1016/j.jallcom.2008.01.141 ↗
5. Nicewarner-Pena · Science · 2001 · 294 · 13710.1126/science.294.5540.137 ↗
6. Han · J. Phys. D: Appl. Phys. · 2009 · 42 · 09500510.1088/0022-3727/42/9/095005 ↗
7. Almasi Kashi · J. Phys. D: Appl. Phys. · 2006 · 39 · 413010.1088/0022-3727/39/19/002 ↗
8. Gerein · J. Phys. Chem. B · 2005 · 109 · 1737210.1021/jp051320d ↗
9. Peng · J. Appl. Phys. · 2000 · 87 · 740510.1063/1.373001 ↗
10. Valizadeh · Electrochim. Acta · 2001 · 47 · 86510.1016/S0013-4686(01)00797-6 ↗
11. Nielsch · Appl. Phys. Lett. · 2001 · 79 · 136010.1063/1.1399006 ↗
12. Khan · Mater. Sci. Eng. C · 2002 · 19 · 34510.1016/S0928-4931(01)00414-3 ↗
13. Qin · Appl. Phys. · 2002 · A74 · 76110.1007/s003390100942 ↗
14. Wang · J. Phys. Chem. B · 2002 · 106 · 250210.1021/jp013115d ↗
15. Liu · Chem. Phys. Lett. · 2008 · 466 · 16510.1016/j.cplett.2008.10.049 ↗
16. Shamila · Appl. Phys. A · 2008 · 92 · 68710.1007/s00339-008-4622-z ↗
17. Yu · Scripta Mater. · 2006 · 54 · 160510.1016/j.scriptamat.2006.01.015 ↗
18. Hu · J. Magn. Magn. Mater. · 2006 · 299 · 17010.1016/j.jmmm.2005.03.093 ↗
19. Ji · Solid State Commun. · 2004 · 130 · 54110.1016/j.ssc.2004.03.013 ↗
20. Ji · Solid State Commun. · 2004 · 132 · 28910.1016/j.ssc.2004.08.007 ↗
21. Liu · Chin. Phys. Lett. · 2010 · 27 · 06750110.1088/0256-307X/27/6/067501 ↗
22. Xu · J. Alloys Compd. · 2010 · 495 · 45010.1016/j.jallcom.2009.10.252 ↗
23. Ramazani · Appl. Phys. A · 2010 · 98 · 69110.1007/s00339-009-5463-0 ↗