Potential-current co-adjusted pulse electrodeposition for highly (110)-oriented Bi2Te3-Se films
Source abstract
Abstract
Abstract Controllable crystal orientation is necessary to obtain high thermoelectric performance in thin films of Bi2Te3 alloys. In the present study, highly (110)-oriented thin films of n-type Bi2Te3-xSex with improved composition controllability are prepared through a simple electrodeposition-based process. Using potential-current co-adjusted pulse electrodeposition (PCP-ED) with adjustments to the zero current during the off-time period enables the fabrication of dense Bi2Te3-xSex thin films with highly (110)-oriented grains by minimizing the ionic gradient (Bi3+, Te2−, Se2−) between the substrate and solution. The power factor of the PCP-ED thin film was much higher than that of the dendritic Bi2Te3-xSex thin film fabricated by constant-potentiostatic electrodeposition (C-ED) because of the simultaneous enhancement of electrical conductivity and Seebeck coefficient. The high power factor of ∼1920 μW/m⋅K2, which is the best value among reported n-type Bi2Te3-based thin films, was obtained at room temperature after low-temperature annealing at 200 °C by exploiting the crystallinity enhancement and carrier concentration optimization.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. Cubic AgPbmSbTe2+m: bulk thermoelectric materials with high figure of merit10.1126/science.1092963 ↗
2. High-thermoelectric performance of nanostructured bismuth antimony telluride bulk alloys10.1126/science.1156446 ↗
3. High-performance bulk thermoelectrics with all-scale hierarchical architectures10.1038/nature11439 ↗
4. On-chip cooling by superlattice-based thin-film thermoelectrics10.1038/nnano.2008.417 ↗
5. Thin-film thermoelectric devices with high room-temperature figures of merit10.1038/35098012 ↗
6. Optimization of electrodeposited p-doped Sb2Te3 thermoelectric films by millisecond potentiostatic pulses10.1002/aenm.201100585 ↗
7. Complex thermoelectric materials10.1038/nmat2090 ↗
8. Semiconductors are cool10.1038/35098159 ↗
9. Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics10.1126/science.aaa4166 ↗
10. Point defect engineering of high performance bismuth telluride based thermoelectric materials10.1002/adfm.201400474 ↗
11. Superlattice-based thin-film thermoelectric modules with high cooling fluxes10.1038/ncomms10302 ↗
12. Graphene substrate for van der Waals epitaxy of layer-structured bismuth antimony telluride thermoelectric film10.1002/adma.201604899 ↗
13. Te monolayer-driven spontaneous van der Waals epitaxy of two-dimensional pnictogen chalcogenide film on sapphire10.1021/acs.nanolett.7b02737 ↗
14. Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands10.1038/ncomms13901 ↗
15. High-performance and compact-designed flexible thermoelectric modules enabled by a reticulate carbon nanotube architecture10.1038/ncomms14886 ↗
16. Dini · 1993
17. Bard · 2001
18. Thermoelectric microdevice fabricated by a MEMS-like electrochemical process10.1038/nmat943 ↗
19. Thermoelectric material electroplating: a historical review10.1007/s11664-010-1079-6 ↗
20. Recent progress in electrodeposition of thermoelectric thin films and nanostructures10.1016/j.electacta.2008.06.015 ↗
21. Pulsed electrodeposition and characterization of Bi2Te3−ySey films10.1016/j.materresbull.2012.07.036 ↗
22. Novel mixed method for the electrochemical deposition of thick layers of Bi2+xTe3−x with controlled stoichiometry10.1016/j.electacta.2008.06.065 ↗
23. Tuning the crystallinity of thermoelectric Bi2Te3 nanowire arrays grown by pulsed electrodeposition
24. Electrochemically deposited thermoelectric n-type Bi2Te3 thin films10.1016/j.electacta.2005.02.016 ↗
25. Optimization of the electrodeposition process of high-performance bismuth antimony telluride compounds for thermoelectric applications10.1021/la101952y ↗
26. Optimizations of pulsed plated p and n-type Bi2Te3-based ternary compounds by annealing in different ambient atmospheres10.1002/aenm.201200417 ↗
27. Electrodeposition and thermoelectric characterization of Bi2Te310.1149/1.2168378 ↗
28. Thermoelectric characteristics of Sb2Te3 thin films formed via surfactant-assisted electrodeposition10.1039/c3ta01631e ↗
29. Köse · 2009 · vol. 54 · 1680
30. Direct electrodeposition of highly dense 50 nm Bi2Te3-ySey nanowire arrays10.1021/nl034079s ↗
31. Insights into the electrodeposition of Bi2Te310.1149/1.1509459 ↗
32. Texture prediction of Bi2Te3 electroplated layers using Hartman's theory of crystal growth10.1023/A:1003790504717 ↗
33. Preparation of bismuth telluride films with high thermoelectric power factor10.1021/acsami.6b10188 ↗
34. Characterisation of electroplated Bi2(Te1−xSex)3 alloys10.1007/s10008-007-0362-9 ↗
35. Ordered structure and high thermoelectric properties of Bi2(Te,Se)3 nanowire array10.1016/j.nanoen.2013.07.009 ↗