Thermoelectric performance of Cu2SnSe3-AgInSe2 solid solutions with Sn vacancy
Source abstract
Abstract
Diamond-like compound Cu 2SnSe 3 has garnered widespread attentions in the field of thermoelectricity due to its considerable performance and non-toxic/earth-abundant characters. However, the high lattice thermal conductivity and low carrier concentration of pristine Cu 2SnSe 3 pose a significant barrier for further thermoelectric performance optimization. In this study, we make a series of Cu 2SnSe 3 based solid solutions with AgInSe 2 to reduce the lattice thermal conductivity, while simultaneously modulating the carrier concentration by introducing Sn vacancies. This approach leads to a significant enhancement in thermoelectric performance of Cu 2SnSe 3, finally achieving a maximum zT value of 1.02 in the (Cu 2Sn 0.99Se 3) 0.8 (AgInSe 2) 0.2 sample at 773 K.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Heusler alloys: electronic and magnetic properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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