Formation of grain boundaries in nanocrystalline SiC ceramics examined by powder diffraction supported by MD simulations

Atomic structure of nanocrystalline SiC powder sintered under high-pressure high-temperature conditions was examined with use of powder diffraction technique supported by molecular dynamics simulation. Shape and atomic structure of grain surfaces was identified based on real space PDF analysis of experimental diffraction data and theoretical calculations performed for atomic models of nanograins relaxed by MD simulation. It is shown that in presence of about 5 % of excess carbon in the initial 11 nm size SiC powder HPHT sintering leads to formation of (100) and (110) grain boundaries formed by single C planes and (111) boundaries formed by double C planes. Under pressure 3 GPa and 1600°C sphere-like grains tend to transform to dodecahedrons terminated by single C atomic planes. Under 8 GPa the grains adopt the shape of cube-octahedrons terminated by (100) single C planes and (111) planes terminated by single and double C planes.