Construction of branched SnS2/Te heterostructure film for self-powered high-performance photodetector application
Source abstract
Abstract
Effective design and construction of heterostructure can conduce to charges transportation/separation and simultaneously improve light absorption ability of photoelectrochemical (PEC) photoelectrode. In this work, the p-type Te nanorods were directly grown on the surface of ultra-thin SnS 2 nanoflakes via a facile and low-cost electrochemical deposition (ED) method. The PEC performance of mixed-dimensional branched SnS 2 /Te nanoflakes/nanorods (NFRs) heterostructure composites film was optimized by varying the ED time. Under simulated light illumination of 40 mW/cm 2 , the optimal photocurrent density of the SnS 2 /Te NFRs photoanode significantly reached up to 0.95 mA/cm 2, approximately 5.2 times and 3.5 times larger than those of bare SnS 2 and Te film, respectively. The improved performance was attributed to appropriate energy band matching and intensive light absorption property. In particular, it presented good stability and high light on/off ratio of about 4.1 ×10 6 at the 0 bias voltages, suggesting an excellent self-powered characteristic of the device. Furthermore, the SnS 2 /Te NFRs photodetector exhibited photoresponsivity of 127 mA/W at 0.8 V bias and photodetectivity of 1.33 ×10 11 Jones, respectively. This study presents a rational strategy to improve the photodetection performance of SnS 2 -based PEC-type photodetector and opens a new avenue for designing high-efficiency photoelectronics device.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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