journal article·2024-01

The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

Yuan Gao, Xinhao Wang, Shengrui Xu, Jiaduo Zhu, Huake Su, Ruobing Wang, Hongchang Tao, Xu Liu, Jincheng Zhang, Yachao Zhang, Yue Hao

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OpenAlex topics: Metal and Thin Film Mechanics · Diamond and Carbon-based Materials Research · GaN-based semiconductor devices and materials

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References (38)

Show source-provided references
1. Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations10.1063/5.0090693 ↗
2. A survey of wide bandgap power semiconductor devices
3. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation10.1364/OE.492088 ↗
4. Self-heating in high-power AlGaN-GaN HFETs10.1109/55.661174 ↗
5. Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and raman spectroscopy10.1109/TED.2007.913005 ↗
6. Room temperature bonding of GaN and diamond substrates via atomic layer10.1016/j.scriptamat.2022.114725 ↗
7. Evaluating the interfacial toughness of GaN-on-diamond with an improved analysis using nanoindentation10.1016/j.scriptamat.2021.114370 ↗
8. Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices10.1016/j.scriptamat.2019.08.029 ↗
9. Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping10.1063/1.4865583 ↗
10. Growth of (111)-oriented diamond grains on hexagonal GaN
11. Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN10.1063/5.0083841 ↗
12. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer10.1016/j.diamond.2013.01.005 ↗
13. Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates10.1016/j.diamond.2009.10.027 ↗
14. Thermal properties of graphene and nanostructured carbon materials10.1038/nmat3064 ↗
15. Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS10.1016/j.corsci.2020.108651 ↗
16. Theoretical study of the thermodynamic and kinetic aspects of terminated (111) diamond surfaces10.1021/jp709625a ↗
17. Morphology modulating the wettability of a diamond film10.1021/la5022643 ↗
18. High power pulsed magnetron sputtering: a review on scientific and engineering state of the art10.1016/j.surfcoat.2009.11.013 ↗
19. Ionized physical vapor deposition (IPVD): a review of technology and applications10.1016/j.tsf.2006.03.033 ↗
20. Orientation of AlN grains nucleated on different diamond substrates by magnetron sputtering
21. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering10.1016/j.apsusc.2017.09.036 ↗
22. Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer10.1016/j.matlet.2021.129783 ↗
23. Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate10.1016/j.matlet.2020.128395 ↗
24. Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes10.1109/TED.2019.2904110 ↗
25. High quality GaN films on miscut (1 1 1) diamond substrates through non-c orientation suppression
26. High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD10.1016/j.matlet.2021.130806 ↗
27. Fast plane wave density functional theory molecular dynamics calculations on multi-GPU machines10.1016/j.jcp.2013.05.005 ↗
28. High-performance nonpolar a-plane GaN-based metal-semiconductor-metal UV photo-detectors fabricated on LaAlO3 substrates10.1039/C7TC05534J ↗
29. Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes10.1016/j.jallcom.2018.09.031 ↗
30. Performance analysis of indium phosphide channel based sub-10 nm double gate spin field effect transistor10.1016/j.physleta.2020.126498 ↗
31. The analysis of a plane wave pseudopotential density functional theory code on a GPU machine10.1016/j.cpc.2012.08.002 ↗
32. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
33. Madelung · 1996
34. Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy10.1016/j.jcrysgro.2009.11.017 ↗
35. Stress distribution of GaN layer grown on micro-pillar patterned GaN templates10.1063/1.4813077 ↗
36. GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy10.1016/j.jcrysgro.2009.08.018 ↗
37. Effect of strain relaxation on performance of lnGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AIN nucleation layer10.1038/s41598-019-40120-9 ↗
38. Comparative research of GaN growth mechanisms on patterned sapphire substrates with sputtered AlON nucleation layers10.3390/ma13183933 ↗