Optimized hydrogen-supplying gate insulator for high-mobility indium oxide TFTs via atomic-level oxygen reactant engineering
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Transition Metal Oxide Nanomaterials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (58)
Show source-provided references
1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices10.1016/j.tsf.2011.07.018 ↗
2. Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated semiconductor chips
3. Highly sensitive and selective gas sensors using p-type oxide semiconductors: overview10.1016/j.snb.2013.11.005 ↗
4. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: an application to amorphous oxide semiconductors in In–Ga–Zn–O system10.1063/1.2749177 ↗
5. Channel-shortening effect suppression of a high-mobility self-aligned oxide TFT using trench structure10.1109/LED.2021.3125146 ↗
6. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor10.1126/science.1083212 ↗
7. Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping10.1109/JDT.2009.2021582 ↗
8. Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications10.1088/0268-1242/30/2/024001 ↗
9. Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT10.1080/15980316.2023.2292465 ↗
10. High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors10.1038/s41467-022-28480-9 ↗
11. Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors10.1002/adma.200902450 ↗
12. High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors
13. Structure–charge transport relationships in fluoride-doped amorphous semiconducting indium oxide: combined experimental and theoretical analysis10.1021/acs.chemmater.9b04257 ↗
14. Recent advances of In2O3-based thin-film transistors: a review10.1016/j.apsadv.2023.100423 ↗
15. Atomic layer deposition: an overview10.1021/cr900056b ↗
16. Selectively nitrogen doped ALD-IGZO TFTs with extremely high mobility and reliability10.1021/acsami.3c05678 ↗
17. Design of InZnSnO semiconductor alloys synthesized by supercycle atomic layer deposition and their rollable applications10.1021/acsami.9b02999 ↗
18. Optimal aluminum doping method in PEALD for designing outstandingly stable InAlZnO TFT10.1002/admi.202300128 ↗
19. Vertical channel ZnO thin-film transistors using an atomic layer deposition method10.1109/LED.2013.2296604 ↗
20. Self-aligned top-gate coplanar In-Ga-Zn-O thin-film transistors10.1109/JDT.2009.2026189 ↗
21. The effect of hydrogen on the device stability of amorphous InGaZnO thin-film transistors under positive bias with various temperature stresses
22. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors10.1063/1.4832076 ↗
23. Role of hydrogen in active layer of oxide-semiconductor-based thin film transistors10.3390/cryst9020075 ↗
24. Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors10.1039/C9RA06960G ↗
25. The effect of annealing in forming gas on the a-IGZO thin film transistor performance and valence band cut-off of IGZO on SiNx10.1016/j.cap.2015.02.017 ↗
26. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors10.1063/1.3028340 ↗
27. Engineering a subnanometer interface tailoring layer for precise hydrogen incorporation and defect passivation for high-end oxide thin-film transistors10.1021/acsami.3c10185 ↗
28. Inserting interfacial layer for atomic-scaled hydrogen control to enhance electrical properties of InZnO TFTs10.1109/LED.2023.3250439 ↗
29. Room-temperature atomic layer deposition of Al2O3: impact on efficiency, stability and surface properties in perovskite solar cells10.1002/cssc.201601186 ↗
30. Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor10.1149/1.2737629 ↗
31. Preparation and characterization of Al2O3 film deposited by RF sputtering and plasma enhanced atomic layer deposition10.1116/1.5023591 ↗
32. Review of plasma-enhanced atomic layer deposition: technical enabler of nanoscale device fabrication
33. Buffer layer engineering of indium oxide based trench TFT for ultra high current driving10.1109/LED.2023.3312360 ↗
34. Electronic structures above mobility edges in crystalline and amorphous In-Ga-Zn-O: percolation conduction examined by analytical model10.1109/JDT.2009.2022064 ↗
35. Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors10.1063/1.3589371 ↗
36. Present status of amorphous In-Ga-Zn-O thin-film transistors10.1088/1468-6996/11/4/044305 ↗
37. Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films10.1063/1.1788897 ↗
38. Electron scattering and doping mechanisms in solid-phase-crystallized In2O3:H prepared by atomic layer deposition10.1021/acsami.5b04420 ↗
39. Hydrogen bistability as the origin of photo-bias-thermal instabilities in amorphous oxide semiconductors10.1002/aelm.201400006 ↗
40. Hydrogen multicentre bonds10.1038/nmat1795 ↗
41. Depth profiling by SIMS-depth resolution, dynamic-range and sensitivity10.1002/sia.740040202 ↗
42. Mechanism of the SIMS matrix effect10.1063/1.90546 ↗
43. Quantitative analysis of the effect of hydrogen diffusion from silicon oxide etch-stopper layer into amorphous In–Ga–Zn–O on thin-film transistor10.1109/TED.2014.2359739 ↗
44. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy10.1063/1.3560769 ↗
45. Oxygen plasma treatment to enable indium oxide MESFET devices10.1002/aelm.202300291 ↗
46. Roles of oxygen interstitial defects in atomic-layer deposited InGaZnO thin films with controlling the cationic compositions and gate-stack processes for the devices with subμm channel lengths10.1021/acsami.2c07258 ↗
47. Quantitative analysis of defect states in amorphous InGaZnO thin-film transistors using photoinduced current transient spectroscopy10.1063/5.0050111 ↗
48. Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition10.1016/j.apsusc.2024.160242 ↗
49. Bistability of hydrogen in ZnO: origin of doping limit and persistent photoconductivity10.1038/srep04124 ↗
50. Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states10.1038/am.2016.11 ↗
51. Effects of diffusion of hydrogen and oxygen on electrical properties of amorphous oxide semiconductor, In-Ga-Zn-O10.1149/2.011301jss ↗
52. High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition10.1016/j.apsusc.2023.158950 ↗
53. Effects of oxidants on the bias-stress instabilities of In-Ga-Zn-O thin film transistors using HfO2 gate insulator prepared by atomic layer deposition10.1109/LED.2020.2970751 ↗
54. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors10.1063/1.2824758 ↗
55. Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors10.1063/1.4832076 ↗
56. Engineering a solution-processed In2O3 TFT with improved ambient stability via MoO3 doping10.1109/TED.2024.3360186 ↗
57. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
58. Printed In-Ga-Zn-O drop-based thin-film transistors sintered using intensely pulsed white light10.1039/C5RA13573G ↗