Enhanced energy storage performance of Mn-doped NBT-based flexible films by defect engineering
Source abstract
Abstract
The rapid development of advanced flexible electronics leads to higher demands on the energy storage performance and spatial adaptability of capacitors. Here, Mn 2+ is doped into 0.6(Na 0.5Bi 0.5)TiO 3-0.4Bi(Mg 0.5Zr 0.5)O 3 (0.6NBT-0.4BMZ), which effectively reduces the carrier content by forming defective complexes through the bonding of Mn 2+ with oxygen vacancies, while maintaining a relatively high polarizability and enhancing the breakdown strength. The optimal storage performance is demonstrated by the 0.6NBT-0.4BMZ film with a Mn doping amount of 1 mol%. The observed breakdown strength, storage density, and storage efficiency are 2900 kV/cm, 60.2 J/cm 3, and 60.3 %, respectively. Furthermore, the films exhibit excellent stability in various temperature ranges (25–205 ℃), frequencies (1–5 kHz), fatigue tests (at 10 7 charge/discharge cycles), and bending resistance tests (20,000 cycles/radius R ≈ 2 mm). These results indicate that NBT-based film materials hold great promise for future flexible energy storage applications.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Dielectric materials and actuators · Advanced Sensor and Energy Harvesting Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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