journal article·2025-03

Epitaxial growth and band energy alignment of Ga2O3 films on diamond (001) single crystal substrate

Xiangyu Xu, Cien Liu, Yushuo Hu, Guangyu Cao, Xing Zhang, Hao Long, Ziqian Sheng, Kelvin H.L. Zhang

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OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

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References (53)

Show source-provided references
1. Gallium oxide-based solar-blind ultraviolet photodetectors10.1088/1361-6641/ab6102 ↗
2. Recent progress on the effects of impurities and defects on the properties of Ga2O310.1039/D2TC01128J ↗
3. Recent advances in NiO/Ga2O3 heterojunctions for power electronics10.1088/1674-4926/44/6/061802 ↗
4. Recent progress of Ga2O3 power technology: large-area devices, packaging and applications10.35848/1347-4065/acb3d3 ↗
5. Recent progress on the electronic structure, defect, and doping properties of Ga2O310.1063/1.5142999 ↗
6. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes10.1063/1.4977857 ↗
7. Ga2O3 Schottky barrier diodes fabricated by using single-crystal β-Ga2O3 (010) substrates10.1109/LED.2013.2244057 ↗
8. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics10.1063/1.4821858 ↗
9. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates10.1063/1.3674287 ↗
10. Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates10.1143/APEX.1.011202 ↗
11. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
12. Recent progress in solar-blind deep-ultraviolet photodetectors based on inorganic ultrawide bandgap semiconductors
13. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping10.1063/1.2919728 ↗
14. Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition
15. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition10.1063/1.4991363 ↗
16. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy10.7567/APEX.10.041102 ↗
17. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth10.7567/JJAP.55.1202A2 ↗
18. Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices10.1002/adma.202006230 ↗
19. Overcoming doping bottlenecks in semiconductors and wide-gap materials10.1016/S0921-4526(99)00605-5 ↗
20. P-type transparent conducting oxides10.1088/0953-8984/28/38/383002 ↗
21. Electronic and chemical properties of nickel oxide thin films and the intrinsic defects compensation mechanism10.1021/acsaelm.2c00230 ↗
22. Electronic and transport properties of Li-doped NiO epitaxial thin films10.1039/C7TC05331B ↗
23. Novel vertical fin-based NiO/β-Ga2O3 heterojunction field-effect transistor with a low Ron,sp10.1149/2162-8777/acf5a1 ↗
24. Y. Wang, H. Gong, X. Jia, G. Han, J. Ye, Y. Liu, H. Hu, X. Ou, X. Ma, Y. Hao, Ieee, First demonstration of RESURF and superjunction β-Ga2O3 MOSFETs with p-NiO/n-Ga2O3 junctions, in: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2021.
25. Demonstration of β-Ga2O3 superjunction-equivalent MOSFETs10.1109/TED.2022.3152464 ↗
26. Enhancement-mode ambipolar thin-film transistors and CMOS logic circuits using bilayer Ga2O3/NiO semiconductors10.1021/acsami.3c15778 ↗
27. X. Zhou, Q. Liu, W. Hao, G. Xu, S. Long, Ieee, Normally-off β-Ga2O3 power heterojunction field-effect-transistor realized by p-NiO and recessed-gate, in: 34th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vancouver, CANADA, 2022, pp. 101-104.10.1109/ISPSD49238.2022.9813678 ↗
28. Diamond power devices: state of the art, modelling, figures of merit and future perspective10.1088/1361-6463/ab4eab ↗
29. Recent progress on heteroepitaxial growth of single crystal diamond films10.1002/elt2.70 ↗
30. Optoelectronic diamond: growth, properties, and photodetection applications10.1002/adom.201800359 ↗
31. Integration of polycrystalline Ga2O3 on diamond for thermal management10.1063/1.5125637 ↗
32. Thermal conductance across β-Ga2O3-diamond van der waals heterogeneous interfaces10.1063/1.5089559 ↗
33. A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces10.1021/acsami.3c02507 ↗
34. Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding10.1063/5.0062531 ↗
35. Epitaxial growth of (-201) β-Ga2O3 on (001) diamond substrates10.1021/acs.cgd.3c00972 ↗
36. Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering10.35848/1882-0786/acfd07 ↗
37. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
38. Generalized gradient approximation made simple
39. Epitaxial growth of β-Ga2O3 (-201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations10.1039/D1TC02852A ↗
40. Epitaxial growth of β-Ga2O3 thin films on SrTiO3 (111) and (100) substrates by chemical vapor deposition10.1016/j.apsusc.2023.156578 ↗
41. Epitaxial structure and electronic property of β-Ga2O3 films grown on MgO (100) substrates by pulsed-laser deposition10.1063/1.4990779 ↗
42. Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O310.1063/1.2164407 ↗
43. Structural and optical properties of heteroepitaxial β-Ga2O3 films grown on MgO (100) substrates10.1016/j.tsf.2012.02.027 ↗
44. Oxygen vacancies and donor impurities in β-Ga2O310.1063/1.3499306 ↗
45. X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces10.1016/j.diamond.2019.107647 ↗
46. X-ray photoemission studies of diamond, graphite, and glassy carbon valence bands10.1103/PhysRevB.9.5268 ↗
47. Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy
48. Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction10.1088/1674-1056/ac7e37 ↗
49. Band offsets of high K gate oxides on III-V semiconductors10.1063/1.2213170 ↗
50. Direct determination of band-gap renormalization in degenerately doped ultrawide band gap β-Ga2O3 semiconductor10.1103/PhysRevB.106.205305 ↗
51. Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide
52. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces10.1103/PhysRevB.64.165411 ↗
53. Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces10.1016/S0039-6028(98)00259-3 ↗