Improving thermoelectric performance of Nickel substituted ZnSb alloy through carrier engineering and nanostructuring
Source abstract
Abstract
Zn 1-xNi xSb (0 ≤ x ≤ 0.08) nanostructures were prepared by the planetary Ball milling technique. XRD analysis confirms the phase purity and orthorhombic crystal structure of the samples. FESEM analysis shows the spherical morphology of the Zn 1-xNi xSb samples. The EDX and elemental mapping analysis confirms the composition and elemental distribution of Zn 1-xNi xSb (0 ≤ x ≤ 0.08) alloys. HRTEM images clearly show the interfaced grains with grain boundaries. DRS-UV analysis revealed the narrowing of bandgap while increasing the Ni content in Zn site due to alloying effect. The synthesized Zn 1-xNi xSb alloys show low resistivity compared to pure samples due to high carrier concentrations. Seebeck coefficient of Zn 1-xNi xSb alloys were measured from room temperature to 635 K. A high-power factor of 1344 µW/m K 2 was obtained for the Zn 0.98Ni 0.02Sb sample at 533 K compared to pristine ZnSb (574 µW/m K 2 at 533 K). High thermoelectric figure of merit (zT) of 0.69 was achieved for Zn 0.98Ni 0.02Sb sample at 533 K compared to pristine ZnSb (zT of 0.34 at 533 K). The experimental results illustrated that Nickel substitution is a one of the possible ways to improve the thermoelectric figure of merit of ZnSb alloys.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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