High-performance solar-blind UV bipolar junction phototransistor based on a vertical Pt/Ga2O3/p-Si Schottky emitter structure
Source abstract
Abstract
Solar-blind UV photodetectors are extensively applied in both military and civilian domains. In this work, a high-performance Pt/Ga 2O 3/p-Si Schottky emitter solar-blind UV bipolar junction phototransistor is demonstrated. It exhibits a peak responsivity (@246 nm) of 1632.8 A/W under a bias of 5 V. This responsivity is significantly enhanced compared to the Al/Ga 2O 3/p-Si heterojunction photodetector, while its response speed remains largely unchanged. Additionally, the device demonstrates excellent solar-blind UV spectral selectivity, with a solar-blind UV to visible-blind UV rejection ratio ( R 246 nm/ R 365 nm) reaching 2.4×10 4. This work provides new insights into the design and fabrication of high-performance Ga 2O 3-based solar-blind UV photodetectors.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (49)
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