Reliable and reversible detection of H2S at room temperature engendered via Pd doping of ZnO films synthesized by SILAR method
Source abstract
Abstract
Metal oxide nanomaterials hold a dominant place in gas sensor field owing to their ample availability, ease of synthesis, viability for portable applications, compatibility with IoT and so on. Nevertheless, there is a constant pursuit to improve their selectivity towards the target gas and reduce the operating temperature. Doping of metal oxide nanomaterials with transition metals has proved successful in many applications. In this context, we report on the simple and cost effective synthesis of Pd doped ZnO (PdZnO) films by SILAR method and their potential application as H 2 S sensor, operating at room temperature. Both ZnO and PdZnO films were extensively characterized by XRD, FESEM, AFM and XPS to confirm the phase purity, morphology, Pd incorporation etc. Gas sensing studies showed that compared to pure ZnO films, PdZnO films exhibited fast, reversible, selective and excellent response to H 2S (∼8 times change in conductivity for 20 ppm) at room temperature. Further the sensor demonstrated stable operation in the relative humidity range from 40 % to 75 %. Negative capacitance exhibited by impedance measurements substantiated the relaxation of interface states upon H 2 S exposure. Based on the experimental results and DFT simulation studies, a plausible sensing mechanism is discussed. Straightforward fabrication process and room-temperature operation project PdZnO sensors appealing for low cost, portable H 2S sensing applications.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Advanced Chemical Sensor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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