journal article·2014-12

Effect of Zn-excess on sintering behavior and microwave dielectric properties in Mg 0.97 Zn 0.03 TiO 3 ceramics

Lingxia Li, Zhengdong Gao, Qun Ren, Haocheng Cai, Sai Li

Publisher page

Abstract

Abstract The microstructures and microwave dielectric properties of Zn-excess (0.0 mol%, 0.5 mol%, 1.0 mol%, 2.0 mol%, 3.0 mol%) Mg 0.97 Zn 0.03 TiO 3 ceramics prepared via the conventional solid-state reaction route were investigated. With Zn-excess doped, the sintering temperature of the specimens can be slightly reduced from 1275 °C to 1250 °C. Microwave dielectric properties of the compounds were studied systematically. A slight Zn-excess does not have obvious effect on the relative dielectric constant ( e r ) and temperature coefficient of resonant frequency ( τ f ) of the specimens. However, the Q × f is very sensitive to the amount of Zn-excess. As the content of Zn-excess increased, the MgTi 2 O 5 phase which was derived from sample without Zn-excess disappeared. Along with the augmentation of Zn-excess, the Q × f , bulk density and e r show an initial increase, followed by a decrease, but the last two factors do not change much. An extremely high Q × f of 277,500 GHz (at 8.5 GHz) together with an e r of 17.66 and a τ f of −55.09 × 10 −6 /°C can be found for Mg 0.97 Zn 0.03 TiO 3 specimen with 0.5 mol% Zn-excess sintered at 1250 °C for 4 h.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Microwave Dielectric Ceramics Synthesis · Ferroelectric and Piezoelectric Materials · Layered Double Hydroxides Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (21)

Show source-provided references
1. Huang · J. Am. Ceram. Soc. · 2007 · 90 · 85810.1111/j.1551-2916.2006.01472.x ↗
2. Xia · Mater. Lett. · 2011 · 65 · 331710.1016/j.matlet.2011.07.044 ↗
3. Liao · J. Am. Ceram. Soc. · 2011 · 94 · 323710.1111/j.1551-2916.2011.04815.x ↗
4. Huang · Mater. Lett. · 2012 · 76 · 2810.1016/j.matlet.2012.02.066 ↗
5. Yu · Mater. Lett. · 2012 · 67 · 29310.1016/j.matlet.2011.10.007 ↗
6. Ferreira · J. Mater. Res. · 1997 · 12 · 329310.1557/JMR.1997.0433 ↗
7. Wakino · Ferroelectrics · 1989 · 91 · 6910.1080/00150198908015730 ↗
8. Huang · J. Am. Ceram. Soc. · 2009 · 92 · 38410.1111/j.1551-2916.2008.02831.x ↗
9. Belous · Ferroelectrics · 2008 · 367 · 14910.1080/00150190802375227 ↗
10. Huang · J. Am. Ceram. Soc. · 2008 · 91 · 342810.1111/j.1551-2916.2008.02614.x ↗
11. Iddles · J. Mater. Sci. · 1992 · 27 · 630310.1007/BF00576276 ↗
12. Xue · J. Mater. Sci.: Mater. Electron. · 2013 · 24 · 1287
13. Kajfez · IEEE Trans. Microw. Theory Tech. · 1999 · 47 · 36710.1109/22.750244 ↗
14. Courtney · IEEE Trans. Microw. Theory Tech. · 1970 · 18 · 47610.1109/TMTT.1970.1127271 ↗
15. Hakki · IEEE Trans. Microw. Theory Tech. · 1960 · 8 · 40210.1109/TMTT.1960.1124749 ↗
16. Silverman · Phys. Rev. · 1962 · 125 · 192110.1103/PhysRev.125.1921 ↗
17. Kucheiko · J. Am. Ceram. Soc. · 1996 · 79 · 273910.1111/j.1151-2916.1996.tb09040.x ↗
18. Sagala · J. Am. Ceram. Soc. · 1992 · 75 · 257310.1111/j.1151-2916.1992.tb05613.x ↗
19. Shannon · J. Appl. Phys. · 1993 · 73 · 34810.1063/1.353856 ↗
20. Tamura · J. Eur. Ceram. Soc. · 2006 · 26 · 177510.1016/j.jeurceramsoc.2005.09.080 ↗
21. Huang · Jpn. J. Appl. Phys. · 2007 · 46 · 28310.1143/JJAP.46.283 ↗