Structure and anisotropic optical properties of γ-InSe under high pressure
Source abstract
Abstract
Pressure is believed to be one effective method to modify the structure and properties of 2D materials. In the present work, the structural transition and anisotropic properties of γ-InSe were in situ investigated under pressure using Raman, photoluminescence and infrared spectra, as well as the density functional theory. Results reveal that γ-InSe would transform to one metallic phase of InSe-III above 11.4 GPa. Below this transition pressure, γ-InSe completely transforms to the high temperature high pressure phase of InSe-II after three pressure up-down cycles. This is the first report on InSe-II obtained at ambient temperature. Besides phase transitions, one direct-to-indirect band transition is observed around 4 GPa. Angle-resolved polarized Raman spectra show all its three phonon modes exhibit 90° periodic variations, yielding a 4-fold symmetry. Pressure would not change its 4-fold symmetry, but its polarized angles vary with pressure. Therefore, pressure has important effect on γ-InSe that induces its structure change and thus results in its optical anisotropy variation.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. 2D materials and heterostructures at extreme pressure10.1002/advs.202002697 ↗
2. High pressure studies of 2D materials and heterostructures: a review10.1016/j.matdes.2021.110363 ↗
3. Increasing doping solubility of RE3+ ions in fergusonite BiVO4 via pressure-induced phase transition10.1021/acs.jpcc.1c07746 ↗
4. Pressure-induced phase transition in α- and β-BiNbO410.1039/D2CP03040C ↗
5. Pressure-induced structural transformations and new polymorphs in BiVO410.1039/D0CP01274B ↗
6. Thickness-dependent phase transition and optical behavior of MoS2 films under high pressure10.1007/s12274-017-1696-y ↗
7. Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states10.1016/j.apsusc.2020.146398 ↗
8. Synthesis of atomically thin hexagonal diamond with compression10.1021/acs.nanolett.0c01872 ↗
9. High pressure transformation of graphene nanoplates: a Raman study10.1016/j.cplett.2013.08.085 ↗
10. The formation of sp3 bonding in compressed BN10.1038/nmat1060 ↗
11. Interplay between structure and superconductivity: Metastable phases of phosphorus under pressure
12. Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: experiments and theory10.1103/PhysRevB.96.094104 ↗
13. Infrared study of the pressure-induced isostructural metallic transition in Mo0.5W0.5S210.1021/acs.jpcc.1c02315 ↗
14. Pressure induced metallization with absence of structural transition in layered molybdenum diselenide10.1038/ncomms8312 ↗
15. Layered indium selenide under high pressure: a review10.3390/cryst8050206 ↗
16. Structural and optical properties of InSe under pressure10.1080/08957959108260687 ↗
17. Pressure-induced layer-nonlayer transformation in InSe10.1016/0378-4363(81)90266-7 ↗
18. High-pressure, high-temperature phase diagram of InSe: a comprehensive study of the electronic and structural properties of the monoclinic phase of InSe under high pressure10.1103/PhysRevB.73.235202 ↗
19. High-pressure electronic structure and phase transitions in monoclinic InSe: X-ray diffraction, raman spectroscopy, and density functional theory10.1103/PhysRevB.77.045208 ↗
20. Pressure-induced superconductivity and nontrivial band topology in compressed γ-InSe10.1103/PhysRevB.105.214506 ↗
21. Supernonlinear shifts of optical energy gaps in inse and gase under hydrostatic pressure
22. Specificfeatures of the electronic structure of III-VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculations10.1002/pssb.200301567 ↗
23. Crystal symmetry and pressure effects on the valence band structure of gamma-InSe and epsilon-GaSe: transport measurements and electronic structure calculations10.1103/PhysRevB.71.125206 ↗
24. Experimental and theoretical study of band structure of InSe and In1− xGaxSe(x< 0.2) under high pressure: direct to indirect crossovers10.1103/PhysRevB.63.125330 ↗
25. Strongly tunable raman resonance in inse under pressure10.1021/acs.jpcc.2c00913 ↗
26. Engineering near-infrared light emission in mechanically exfoliated inse platelets through hydrostatic pressure for multicolor microlasing10.1021/acs.nanolett.2c01127 ↗
27. High-pressure electrical transport measurements on p-type GaSe and InSe10.1080/08957950601101787 ↗
28. High pressure-high temperature phase diagram of InSe10.1080/08957950310001635756 ↗
29. Vibrational properties of inse under pressure: experimentand theory10.1002/pssb.2221980117 ↗
30. Precursor effects of the rhombohedral-to-cubic phase transition in indium selenide10.1080/08957950212819 ↗
31. Optical reflectivity of solid and liquid methane: application to spectroscopy of Titan's hydrocarbon lakes10.1029/2011GL049710 ↗
32. New metallic ordered phase of perovskite cspbi3 under pressure
33. Unusual phonon behavior and ultra-low thermal conductance of monolayer InSe10.1039/C7NR07779C ↗
34. Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe10.1126/science.aba9778 ↗