Lattice-related understanding regarding V-doping induced ZnO n-to-p type shift within LCT scope
Source abstract
Abstract
Abstract Nowadays, experiments based on possible controlling of the electrical conductivity of ZnO material as thin film and nano-forms are in progress. To reach especially p-type ZnO remains a principal challenge for many of research teams. Also, there are still problems concerning the stability of the p-type conductivity of this binary oxide. Herein, we reported a first principal explanation under the well known Lattice Compatibility Theory (LCT) to a noticeable n/p shift of 3% vanadium doped ZnO sprayed thin films published recently [1]. This paper gives plausible understanding of this change of ZnO character found by means of ethanol gas sensing. Moreover, the photoluminescence study of V doped ZnO thin films reinforce the change in their electrical character because such doping may behave both as a donor and as an acceptor in ZnO matrix.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Electronic and Structural Properties of Oxides · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (67)
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