Exploring the potential of TiO2/ZrO2 memristors for neuromorphic computing: Annealing strategy and synaptic characteristics
Source abstract
Abstract
Artificial Neural Networks (ANNs) have reshaped computing paradigms, transcending traditional methods. Leveraging oxide-based bilayer RRAM memristors, specifically TiO2/ZrO2 deposited via sputtering, offers remarkable potential for RS memory and neuromorphic computing. This study pioneers an extensive annealing approach to counteract variability challenges in LRS and HRS during endurance tests. The Pt/TiO 2/ZrO 2 /Pt memristor device`s structural aspects are validated through cross-sectional high resolution transmission electron microscopy (HRTEM) analysis. Systematic XPS examination investigates the impact of annealing on oxygen vacancies. Successful bipolar resistive switching is unveiled through I-V characteristics, with 550°C annealing optimizing stable endurance cycling (1000 dc cycles). Conduction mechanisms during set/reset are illuminated, corroborated by Schottky emission fitting. Synaptic behavior emulation, Spike-Timing-Dependent Plasticity (STDP), and theoretical simulations with a 28×28 MNIST dataset underscore the ANN`s 84.6% average recognition rate. The amalgamation of MNIST-based artificial learning and the innovative annealing strategy holds exciting potential for memory applications and advanced neuromorphic explorations.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
Show source-provided references
1. Adaptive crystallite kinetics in homogenous bilayer oxide memristor for emulating diverse synaptic plasticity10.1002/adfm.201706927 ↗
2. Nanoscale memristor device as synapse in neuromorphic systems10.1021/nl904092h ↗
3. Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor10.1002/adfm.201103148 ↗
4. Memristive switching mechanism for metal/oxide/metal nanodevices10.1038/nnano.2008.160 ↗
5. Baek, I.G., D.C. Kim, M.J. Lee, H.-J. Kim, E.K. Yim, M.S. Lee, J.E. Lee et al. Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application. In IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest., pp. 750-753. IEEE, 2005.10.1109/IEDM.2005.1609462 ↗
6. Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges10.1002/adma.200900375 ↗
7. Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices10.1016/j.cap.2010.11.124 ↗
8. A memristor with low switching current and voltage for 1S1R integration and array operation10.1002/aelm.201901411 ↗
9. Bipolar analog memristors as artificial synapses for neuromorphic computing10.3390/ma11112102 ↗
10. Resistive switching and impedance characteristics of M/TiO2− x/TiO2/M nano-ionic memristor10.1016/j.ssi.2018.07.012 ↗
11. Resistive switching and impedance characteristics of M/TiO2− x/TiO2/M nano-ionic memristor10.1016/j.ssi.2018.07.012 ↗
12. Nitrogen-doped titanium dioxide nanorod array memristors with synaptic features and tunable memory lifetime for neuromorphic computing
13. Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing10.1016/j.chaos.2020.110236 ↗
14. Self-reduction of the native TiO2 (110) surface during cooling after thermal annealing–in-operando investigations10.1038/s41598-019-48837-3 ↗
15. Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir
16. Artificial HfO2/TiOx synapses with controllable memory window and high uniformity for brain-inspired computing10.3390/nano13030605 ↗
17. Fully solution-induced high performance indium oxide thin film transistors with ZrO x high-k gate dielectrics10.1039/C8RA02108B ↗
18. Impact of post-oxide deposition annealing on resistive switching in HfO 2-based oxide RRAM and conductive-bridge RAM devices
19. Co/CoO/CoFe 2 O 4/G nanocomposites derived from layered double hydroxides towards mass production of efficient Pt-free electrocatalysts for oxygen reduction reaction10.1039/C3NR05352K ↗
20. Annealing effect on the bipolar resistive switching memory of NiZn ferrite films10.1016/j.jallcom.2018.11.345 ↗
21. Forming-less and non-volatile resistive switching in WOx by oxygen vacancy control at interfaces10.1038/s41598-017-10851-8 ↗
22. Sol-gel based zirconium dioxide dielectrics by oxygen-annealing at low temperature for highly stable and robust flexible resistive random access memory
23. Solution-processed high-k HfO 2 gate dielectric processed under softening temperature of polymer substrates
24. Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO 2-based resistive switching memory for neuromorphic applications10.1039/D0RA06389D ↗
25. Enhanced resistive switching performance of hafnium oxide-based devices: Effects of growth and annealing temperatures10.1016/j.jallcom.2022.165251 ↗
26. Electrical and mechanical self-healing in high-performance dielectric elastomer actuator materials10.1002/adfm.201808431 ↗
27. Park, Seong-Geon, Min Kyu Yang, Hyunsu Ju, Dong-Jun Seong, Jung Moo Lee, Eunmi Kim, Seungjae Jung et al. A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM). In 2012 International Electron Devices Meeting, pp. 20-28. IEEE, 2012.10.1109/IEDM.2012.6479084 ↗
28. Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment10.1016/j.microrel.2015.11.018 ↗
29. Lee, Myoung-Jae, Youngsoo Park, Bo-Soo Kang, Seung-Eon Ahn, Changbum Lee, Kihwan Kim, Wenxu Xianyu et al. 2-stack 1D–1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications In 2007 IEEE International Electron Devices Meeting, pp. 771-774. IEEE, 2007.10.1109/IEDM.2007.4419061 ↗
30. Highly stable atomic layer deposited zinc oxide thin-film transistors incorporating triple O 2 annealing
31. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device
32. Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant10.1021/acsami.5b11682 ↗
33. Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices10.1016/j.cap.2017.06.012 ↗
34. Random and localized resistive switching observation in Pt/NiO/Pt
35. Oxide-based RRAM materials for neuromorphic computing10.1007/s10853-018-2134-6 ↗
36. Oxide-based RRAM materials for neuromorphic computing10.1007/s10853-018-2134-6 ↗
37. Effect of carrier screening on ZnO-based resistive switching memory devices10.1007/s12274-016-1267-7 ↗
38. Recent progress in solution-based metal oxide resistive switching devices10.1002/adma.202004328 ↗
39. Superior unipolar resistive switching in stacked ZrOx/ZrO2/ZrOx structure
40. Toward a reliable synaptic simulation using Al-doped HfO2 RRAM10.1021/acsami.9b21530 ↗
41. Towards engineering in memristors for emerging memory and neuromorphic computing: a review.
42. Enhancing short-term plasticity by inserting a thin TiO2 Layer in WO x-based resistive switching memory10.3390/coatings10090908 ↗
43. Competing memristors for brain-inspired computing
44. Synaptic and resistive switching behaviors in NiO/Cu2O heterojunction memristor for bioinspired neuromorphic computing10.1016/j.apsusc.2022.154718 ↗
45. de Groot. "Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2− x/ZrO2 bilayer memory