High-quality Cr2O3 - Ga2O3 solid solutions films grown by mist-CVD epitaxy
Source abstract
Abstract
Micron-thick layers of (Cr 1-xGa x) 2O 3 solid solutions were grown by modified mist chemical vapor deposition (mist-CVD) with three different Ga concentrations. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) methods were used to analyze the quality of the films. They showed good crystallinity, homogeneity and coalescence of the samples. Solid solution contents estimation was performed via applying Vegard’s law to XRD data and by its results the highest reached Cr:Ga ratio is approximately 1:1. Transmission spectra of solid solutions demonstrated blue-shift of the absorption edge with increase of the Ga contents. Optical bandgap increased from 3.06 eV for undoped Cr 2O 3 sample to 3.73 eV for the layer with the highest Ga concentration.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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