Effect of doping content of Pr ions on oxygen vacancies in SrTiO3 films
Source abstract
Abstract
Abstract Both undoped and Pr-doped STO films are fabricated on (1 1 1) Pt/Ti/SiO 2 /Si by metal organic deposition. The influence of Pr dopant on oxygen vacancies is studied using X-ray photoelectron spectroscopy and X-ray diffraction. It is found that the concentration of oxygen vacancies is not decreases with the increase of the content of higher valence Pr ions, but decreases and increases alternatively. These results are associated with the variable valence and doping position of Pr ions, and the possible causes of which are discussed.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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