Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD
Source abstract
Abstract
Pulsed laser deposition (PLD) and two-step thermal annealing are combined to fabricate MgO, TiO 2, Y 2O 3, Al 2O 3, ZrO 2 and HfO 2 passivation layers on a-IGZO TFTs. The influences of the passivation layers on the electrical properties are investigated. It is found that conventional PLD is sufficient to deposit high-quality Y 2O 3 and ZrO 2 passivation layers, but hollow cathode assisted PLD (HC-PLD) should be employed to solve the oxygen deficiency in MgO, TiO 2, Al 2O 3, and HfO 2 thin films by oxygen plasma. Furthermore, two-step annealing is adopted to improve the performances of the devices: Firstly, a-IGZO thin films are pre-annealed to enhance the carrier mobility. Secondly, the passivation layers are deposited on a-IGZO and the whole structures are post-annealed to endow the good on-off performance. The sharp a-IGZO/passivation interfaces remain after thermal annealing. The Hall mobility is mainly restricted by the scattering of metal ions at the a-IGZO/passivation interface. TiO 2 passivated devices exhibit the highest Hall mobility of 16.7 cm 2V −1s −1 , owing to the smaller cation charge. The threshold voltage stability under positive gate bias is dependent on the metal-oxygen bond strength in the passivation layers. ZrO 2 passivated devices have the lowest threshold voltage shift, beneficial from the strong Zr-O bonds. The subthreshold performance and the stability under illumination are determined by the oxygen vacancies at a-IGZO/passivation interfaces and ZrO 2 passivated devices exhibit the lowest subthreshold swing and the best illumination stability.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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