DataVXphysica status solidi (RRL) – Rapid Research LettersPaper
journal article·2019-07

P‐Type Silicon Solar Cells with Passivating Rear Contact Formed by LPCVD p+ Polysilicon and Screen Printed Ag Metallization

Sebastian Mack, Martijn Lenes, Jan‐Marc Luchies, Andreas Wolf

physica status solidi (RRL) – Rapid Research Letters· Volume 13· Issue 7
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Source abstract

Abstract

The work shows a process flow for the fabrication of bifacial 244 cm2 large p‐type solar cells with a passivating rear contact formed by low pressure chemical vapor deposition of an in‐situ boron doped polysilicon layer. Contacting of both polarities is achieved by screen printing of a silver paste and contact firing. Contact resistance values are shown to heavily depend on firing set temperatures. In a first experiment, conversion efficiencies up to 20.4% are demonstrated.
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Research context

Materials processing

OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Fraunhofer Institute for Solar Energy Systems (ISE) Heidenhofstrasse 2 79110 Freiburg Germany

Tempress Systems Radeweg 31 8171 MD Vaassen The Netherlands

Amtech Systems Inc. Radeweg 31 8171 MD Vaassen The Netherlands

Funding

European Commission

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