DataVXphysica status solidi (RRL) – Rapid Research LettersPaper
journal article·2013-05Open access

Improved control of the phosphorous surface concentration during in‐line diffusion of c‐Si solar cells by APCVD

Kristopher O. Davis, Kaiyun Jiang, Carsten Demberger, Heiko Zunft, Helge Haverkamp, Dirk Habermann, Winston V. Schoenfeld

physica status solidi (RRL) – Rapid Research Letters· Volume 7· Issue 5
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Abstract

Abstract Emitter formation for industrial crystalline silicon (c‐Si) solar cells is demonstrated by the deposition of phosphorous‐doped silicate glasses (PSG) on p‐type monocrystalline silicon wafers via in‐line atmospheric pressure chemical vapor deposition (APCVD) and subsequent thermal diffusion. Processed wafers with and without the PSG layers have been analysed by SIMS measurements to investigate the depth profiles of the resultant phosphorous emitters. Subsequently, complete solar cells were fabricated using the phosphorous emitters formed by doped silicate glasses to determine the impact of this high‐throughput doping method on cell performance. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context

Ceramics & glassesMaterials processing

OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Integrated Circuits and Semiconductor Failure Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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