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journal article·2023-12-10Open access

Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher‐Temperature Forming Technique

Jangseop Lee, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang

physica status solidi (RRL) – Rapid Research Letters
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Source abstract

Abstract

Amorphous chalcogenide‐based ovonic threshold switch (OTS) has significant potential as a selector device in high‐density memory arrays. However, to realize the ideal selector device, OTS still needs to enhance its reliability characteristics such as device uniformity and threshold voltage (Vth) drift. Herein, the effect of elevated temperature forming on the selector characteristics of an OTS device is investigated. The findings indicate that the reliability performance of the device significantly improves when the forming process is conducted at higher temperature. In particular, it shows excellent Vth uniformity (σ = 32 mV) and a notable enhancement in the Vth drift characteristics. Based on trap analysis at cryogenic temperature (77 K), it is confirmed that improved reliability characteristics can be attributed to the stability of the activated trap formed by the HT forming process.
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Pohang University of Science and Technology (POSTECH) Pohang 37673 South Korea

Funding

National Research Foundation of Korea

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