Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices
Source abstract
Abstract
In this study, we investigated the resistive switching (RS) characteristics of ZrO x/HfO x bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfO x layer was deposited by atomic layer deposition (ALD) between the ZrO x layer and TiN electrode to enhance the RS. Compared to the ZrO x single-layer device, the bilayer device exhibited a lower high resistance state (HRS) current, which improved endurance and reduced energy consumption due to the insulating HfO x layer. In addition, a DC endurance of 300 cycles and strong retention characteristics (10,000 s) were achieved in the bilayer device. Furthermore, the multi-level cell (MLC), potentiation, and depression characteristics were evaluated to demonstrate the suitability of the Ti/ZrO x/HfO x /TiN device for use as a neuromorphic device. With regard to potentiation and depression, various pulse schemes were employed to improve the asymmetric conductance changes for neuromorphic system applications.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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