journal article·2021-06

Evidence of Carrier Localization in AlGaN/GaN‐Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

Mei Cui, Wei Guo, Houqiang Xu, Jie'an Jiang, Li Chen, Somak Mitra, Iman S. Roqan, Haibo Jiang, Xiaohang Li, Jichun Ye

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Abstract

AlGaN‐based multiple quantum wells (MQWs) incorporating opposite polarity domains are grown by metal–organic chemical vapor deposition (MOCVD). A direct demonstration of the carrier localization effect is provided by a combination analysis of space‐resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV‐MQWs despite the inferior crystalline quality in the N‐polar domains. This suggests that incorporating sub‐micrometer‐scale polarity domains in the MQWs is promising for the development of efficient UV emitters.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo Zhejiang 315201 China

University of Chinese Academy of Sciences Beijing 100049 China

School of Physical Science and Technology ShanghaiTech University Pudong Shanghai 201210 China

Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955 Saudi Arabia

School of Molecular Sciences University of Western Australia Perth 6009 Australia

Advanced Semiconductor Laboratory King Abdullah University of Science and Technology (KAUST) Thuwal 23955 Saudi Arabia

Funding

National Natural Science Foundation of China

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