Pulse frequency dependent synaptic characteristics in Ta/SiN/Si memristor device for neuromorphic system
Source abstract
Abstract
Abstract We compare the filamentary resistive switching and the homogeneous resistive switching of the Ta/SiN/Si memristor device for the implementation of hardware-based neuromorphic system. The switching mode can be determined by the first switching curve. The low-resistance state (LRS) of filamentary resistive switching has stable retention properties without the resistance degradation, indicating the existence of different switching mechanisms between two. In homogeneous resistive switching mode, a more gradual increase and decrease in conductance control is possible. The multi-level states property provides better performance of pattern recognition when applied to neural network model. Finally, we demonstrate the improved frequency dependent conductance modulation in homogeneous resistive switching mode.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
Show source-provided references
1. Ferroelectric polarization aided low voltage operation of 3D NAND flash memories10.3390/electronics10010038 ↗
2. Neuromorphic computing using emerging synaptic devices: a retrospective summary and an outlook10.3390/electronics9091414 ↗
3. Study of multi-level characteristics for 3D vertical resistive switching memory10.1038/srep05780 ↗
4. Memristive devices for computing10.1038/nnano.2012.240 ↗
5. Multilayer metal-oxide memristive device with stabilized resistive switching10.1002/admt.201900607 ↗
6. Resistive switching in transition metal oxides10.1016/S1369-7021(08)70119-6 ↗
7. Neurohybrid memristive CMOS-integrated systems for biosensors and neuroprosthetics10.3389/fnins.2020.00358 ↗
8. Spatial properties of STDP in a self-learning spiking neural network enable controlling a mobile robot10.3389/fnins.2020.00088 ↗
9. Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights10.1088/1361-6528/ab4a6d ↗
10. Necessary conditions for STDP-based pattern recognition learning in a memristive spiking neural network10.1016/j.neunet.2020.11.005 ↗
11. Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications10.1016/j.mee.2019.110988 ↗
12. Emerging memory technologies for neuromorphic computing10.1088/1361-6528/aae975 ↗
13. Bipolar analog memristive switching of In2O3 using Al nanoparticle10.1166/jnn.2019.16867 ↗
14. Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application10.1016/j.jallcom.2020.156675 ↗
15. Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering10.1021/acsami.0c07867 ↗
16. Reservoir computing using dynamic memristors for temporal information processing10.1038/s41467-017-02337-y ↗
17. Lead-free monocrystalline perovskite resistive switching device for temporal information processing10.1016/j.nanoen.2020.104616 ↗
18. Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures10.1063/1.4952719 ↗
19. Evidence of preserved audience design with aging in interactive conversation10.1037/pag0000341 ↗
20. Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors10.1016/j.mee.2017.11.002 ↗
21. Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices10.1039/C6RA28477A ↗
22. A-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths10.1038/srep15762 ↗
23. Analog synaptic behavior if silicon nitride memristor10.1021/acsami.7b11191 ↗
24. Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping
25. TaSiN diffusion barriers deposited by reactive magnetron sputtering10.1016/j.tsf.2006.01.076 ↗
26. Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching10.1038/s41598-018-26997-y ↗
27. Emergent dynamical properties of the BCM learning rule10.1186/s13408-017-0044-6 ↗