Designing artificial carbon clusters using Ge2Sb2Te5/C superlattice-like structure for phase change applications
Source abstract
Abstract
Abstract Resistance drift and heat loss are two challenges in phase change memory. In this work, superlattice-like (SLL) Ge2Sb2Te5/C film was fabricated, which was designed to suppress the resistance drift and heat loss of the device. Ab initio molecular dynamics simulations were used to evaluate the evolution of C nanofilms at the atomic scale and most C atoms were found accumulated spontaneously as nanometer-scale carbon clusters. Long-range atomic migrations were restrained because of the artificial carbon clusters, which contributed to the resistance drift suppression. The fabricated carbon nanolayers were also believed to serve as an artificial thermal barrier, and an energy-inexpensive amorphization process based on the device has been achieved. With two-dimensional finite element analysis, we found that the suppressed heat dissipation in the programming regions were related to the low interfacial thermal conductance between the C and Ge2Sb2Te5. The Ge2Sb2Te5/C SLL thin film demonstrates potential for high-performance phase change memory applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Transition Metal Oxide Nanomaterials · Glass properties and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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