journal article·2015-10

Investigations of the wetting behaviors of Zn–25Sn, Zn–25Sn–XPr and Zn–25Sn–YAl high temperature lead free solders in air and Ar ambient

Xi Niu, Kwang-Lung Lin

Publisher page

Abstract

Abstract Zn–25Sn based alloys possess great potential as candidates for high temperature lead-free solders. But it exhibits poor oxidation resistance due to the high Zinc content. This study selected Pr (0.01–0.08 wt%) and Al (0.01–0.25 wt%) as alloying elements to improve the wetting performance of Zn–25Sn based solder alloy. It was found that the addition of 0.01 wt% Pr increased the wetting force. However, dewetting was observed under air atmosphere for the Zn–25Sn, Pr-containing solder, and solder containing 0.01% Al. It was also be found that the dewetting of Pr-containing solder could be avoided under argon atmosphere as well as with higher Al addition.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · Aluminum Alloys Composites Properties · Aluminum Alloy Microstructure Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (45)

Show source-provided references
1. Wang · Mater. Chem. Phys. · 2012 · 136 · 32510.1016/j.matchemphys.2012.03.057 ↗
2. Suganuma · JOM · 2009 · 61 · 6410.1007/s11837-009-0013-y ↗
3. K · Mater. Trans. · 2008 · 49 · 153110.2320/matertrans.MF200809 ↗
4. Chidambaram · Microelectron. Eng. · 2011 · 88 · 98110.1016/j.mee.2010.12.072 ↗
5. N · J. Alloys Compd. · 2009 · 467 · 24610.1016/j.jallcom.2007.12.048 ↗
6. Gayle · JOM · 2001 · 53 · 1710.1007/s11837-001-0097-5 ↗
7. Chen · Mater. Des. · 2010 · 31 · 219610.1016/j.matdes.2009.10.053 ↗
8. Yu · J. Alloys Compd. · 2004 · 385 · 11910.1016/j.jallcom.2004.04.129 ↗
9. Kroupa · J. Mater. Eng. Perform. · 2012 · 21 · 62910.1007/s11665-012-0125-3 ↗
10. H · JOM · 2009 · 61 · 59
11. Components, packaging and manufacturing technology
12. Ivey · Micron · 1998 · 29 · 28110.1016/S0968-4328(97)00057-7 ↗
13. Zeng · Microelectron. Reliab. · 2012 · 52 · 130610.1016/j.microrel.2012.02.018 ↗
14. Song · J. Electron. Mater. · 2006 · 35 · 104110.1007/BF02692565 ↗
15. Lalena · J. Electron. Mater. · 2002 · 31 · 124410.1007/s11664-002-0016-8 ↗
16. Shimizu · J. Electron. Mater. · 1999 · 28 · 117210.1007/s11664-999-0153-4 ↗
17. Wu · J. Electron. Mater. · 2003 · 32 · 6310.1007/s11664-003-0238-4 ↗
18. Shimizu · J. Electron. Mater. · 1999 · 28 · 117210.1007/s11664-999-0153-4 ↗
19. Takaku · J. Electron. Mater. · 2008 · 37 · 31410.1007/s11664-007-0344-9 ↗
20. Lee · Mater. Trans. · 2005 · 46 · 241310.2320/matertrans.46.2413 ↗
21. Lee · Mater. Trans. · 2007 · 48 · 58410.2320/matertrans.48.584 ↗
22. Kim · J. Electron. Mater. · 2008 · 38 · 26610.1007/s11664-008-0550-0 ↗
23. Kim · J. Electron. Mater. · 2009 · 38 · 87310.1007/s11664-009-0770-y ↗
24. Mahmudi · J. Mater. Sci. Mater. Electron. · 2011 · 22 · 116810.1007/s10854-010-0279-4 ↗
25. Song · J. Electron. Mater. · 2013 · 42 · 281310.1007/s11664-013-2653-5 ↗
26. Takahashi · J. Electron. Mater. · 2010 · 39 · 124110.1007/s11664-010-1233-1 ↗
27. Mahmudi · J. Electron. Mater. · 2010 · 39 · 249510.1007/s11664-010-1359-1 ↗
28. Wu · J. Electron. Mater. · 2002 · 31 · 92110.1007/s11664-002-0184-6 ↗
29. Zhang · J. Mater. Sci. Mater. Electron. · 2009 · 20 · 68510.1007/s10854-009-9895-2 ↗
30. Gao · J. Mater. Sci. Mater. Electron. · 2009 · 21 · 91010.1007/s10854-009-0017-y ↗
31. Xiao · J. Mater. Sci. Mater. Electron. · 2010 · 22 · 65910.1007/s10854-010-0192-x ↗
32. Zhang · IEEE Trans. Electron. Devices · 2012 · 59 · 326910.1109/TED.2012.2219624 ↗
33. Wang · Electr. Weld. Mach. · 2008 · 38 · 61
34. Cheng · J. Electron. Mater. · 2002 · 31 · 94010.1007/s11664-002-0187-3 ↗
35. Hsuan · J. Alloys Compd. · 2009 · 469 · 35010.1016/j.jallcom.2008.01.121 ↗
36. Lee · Electron. Mater. Lett. · 2014 · 10 · 99710.1007/s13391-014-3364-7 ↗
37. Massalski · 1986
38. Gancarz · J. Alloys Compd. · 2014 · 582 · 31310.1016/j.jallcom.2013.08.055 ↗
39. Wang · Metal. Mat. Eng. · 2009 · 38 · 2187
40. Liu · Appl. Phys. Lett. · 1996 · 69 · 401410.1063/1.117855 ↗
41. Yost · 1993
42. Laurila · Mat. Sci. Eng. R. · 2005 · 49 · 110.1016/j.mser.2005.03.001 ↗
43. Schaefer · J. Electron. Mater. · 1998 · 27 · 116710.1007/s11664-998-0066-7 ↗
44. Gagliano · J. Electron. Mater. · 2002 · 31 · 119510.1007/s11664-002-0010-1 ↗
45. Okamoto · 1986