Effects of low-electronegativity doping on the temperature rise of Ag/ZnO electrical contact materials

Ag/ZnO:M (doped ZnO by metallic dopants) can be utilized as a novel material for low-temperature rise in the field of new energy. However, the doping strategy and mechanism of this material to reduce the temperature rise need further clarification. In this work, the effects of metal ion (K ⁺, Li ⁺, Cu ²⁺, Al ³⁺ ) doping on the contact resistance and temperature rise of Ag/ZnO electrical contact materials have been investigated. The results indicate that the primary factor in reducing temperature rise is to decrease contact resistance, which is predominantly influenced by the conductivity and dispersion of the second phase. Doping ZnO with low electronegativity metal ions increases the carrier concentration and enhances the electrical conductivity of the powder. This process also reduces agglomeration and improves dispersion by inhibiting OH adsorption. Consequently, doping low electronegativity metal elements into ZnO has proven to be an effective method for achieving a lower temperature rise. This work presents an innovative approach to designing novel Ag/ZnO electrical contact materials by doping metal ions to overcome the temperature rise bottleneck in the new energy field.