Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy

Abstract Dilute nitride InSbN alloys have been grown using radio frequency plasma‐assisted molecular beam epitaxy. The effects of low growth temperature (270–330 °C) and nitrogen plasma power (150–180 W) on the N incorporation were studied. From the X‐ray diffraction (XRD), secondary ion mass spectroscopy and the nuclear reaction analysis (¹⁴N(d,p₅)¹⁵N), the highest ratio of substitutional N_Sb over the undesired interstitial N is yielded at the lower limit of 270 °C. Like N_Sb, a large amount of interstitial N–N also contribute to lattice contraction. Increasing the plasma power (180 W) results in a significant increase in interstitial N in [011] direction. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)