First evidence of resistive switching in polycrystalline GaV₄S₈ thin layers

Abstract Recently a new type of reversible and non‐volatile resistive switching was discovered in single crystals of Mott insulators AM₄X₈ (A = Ga, Ge; M = V, Nb, Ta; X = S, Se). Here we report on the first synthesis of thin layers (thicknesses in the 100 to 1000 nm range) of GaV₄S₈ by RF magnetron sputtering process. Energy dispersive spectroscopy, X‐ray diffraction and TEM analyses attest the high quality of polycrystalline GaV₄S₈ thin layers. Electrical measurements demonstrate that deposited GaV₄S₈ thin films exhibit a non‐volatile reversible resistive switching at room temperature with writing/erasing times of ∼10 µs and a memory window (R_high – R_low)/ R_low > 33%. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)