InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy
Source abstract
Abstract
The growth of InAs quantum dots (QDs) on InP(100) via droplet epitaxy in a metalorganic vapor phase epitaxy (MOVPE) reactor is studied. Formation of indium droplets is investigated with varying substrate temperature, and spontaneous formation of nanoholes is observed for the first time under MOVPE conditions. Indium droplets are crystallized into QDs under arsenic flow at different temperatures. For temperatures greater than 500 °C, a local etching takes place in the QD vicinity, showing an unexpected morphology which is found to be strongly dependent on the crystallization conditions. Such QDs are structurally and optically investigated and emission from single QDs in the telecom C‐band is detected via microphotoluminescence at low temperature.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
EPSRC National Epitaxy Facility Department of Electronic and Electrical Engineering The University of Sheffield North Campus Broad Lane Sheffield S37HQ UK
Department of Electronic and Electrical Engineering The University of Sheffield North Campus Broad Lane Sheffield S37HQ UK
Funding
Innovate UK
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