Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers
Source abstract
Abstract
We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift‐diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.
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Research context
OpenAlex topics: Magnetic properties of thin films · Characterization and Applications of Magnetic Nanoparticles · Theoretical and Computational Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE) and Computer, Electrical and Mathematical Science and Engineering Division (CEMSE) Thuwal 23955‐6900 Kingdom of Saudi Arabia
Funding
King Abdullah University of Science and Technology (KAUST) through the Office of Sponsored Research (OSR)
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