Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms (Phys. Status Solidi RRL 3/2019)

The back-cover image represents lasing from square-lattice nanowire array photonic crystals on silicon-on-insulator (SOI) platforms. Integration of light sources on silicon platforms is regarded as a crucial requirement for various nanophotonic applications, but the lattice mismatch between III–V materials and silicon has been one of the major challenges to realize this. Here, Hyunseok Kim et al. (article no. 1800489) employed bottom-up integrated nanowires to overcome this issue and realize highquality III.V materials on silicon. InGaAs/InP core/shell nanowires form photonic crystals with a footprint of only 3.0×3.0 μm2, and a high Q factor of 23,000 is achieved by integrating these nanowires on two-dimensional silicon gratings. Roomtemperature lasing is observed from a fundamental band-edge mode at 1290 nm, which is the O-band of the telecommunication wavelength. These results represent a meaningful step toward ultracompact and monolithic III–V lasers on silicon photonic platforms.