DataVXphysica status solidi (RRL) – Rapid Research LettersPaper
journal article·2013-12

Effect of nitrogen doping on the thermal conductivity of GeTe thin films

Roberto Fallica, Enrico Varesi, Luca Fumagalli, Simona Spadoni, Massimo Longo, Claudia Wiemer

physica status solidi (RRL) – Rapid Research Letters· Volume 7· Issue 12
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Abstract

Abstract The 3ω method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (–25%) than in the crystalline one (–40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO2, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Chalcogenide Semiconductor Thin Films

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References (28)

Show source-provided references
1. 10.1016/j.sse.2008.04.03110.1016/j.sse.2008.04.031 ↗
2. H.Horii J. H.Yi J. H.Park Y. H.Ha I. G.Baek S. O.Parket al. VLSI Symposium 2003 p. 177.
3. 10.1149/1.355660910.1149/1.3556609 ↗
4. 10.1149/1.352794110.1149/1.3527941 ↗
5. A.Fantini V.Sousa L.Perniola E.Gourvest J. C.Bastien S.Maitrejean S.Braga N.Pashkov A.Bastard B.Hyot A.Roule A.Persico H.Feldis C.Jahan J. F.Nodin D.Blachier A.Toffoli G.Reimbold F.Fillot F.Pierre R.Annunziata D.Benshael P.Mazoyer C.Vallée T.Billon J.Hazart B.De Salvo andF.Boulanger Electron Devices Meeting (IEDM) 2010 IEEE International 6–8 Dec. 2010.
6. 10.1016/j.sse.2011.06.02910.1016/j.sse.2011.06.029 ↗
7. 10.1063/1.359838410.1063/1.3598384 ↗
8. 10.1063/1.293195110.1063/1.2931951 ↗
9. 10.1109/LED.2008.200301210.1109/LED.2008.2003012 ↗
10. E.Small S. M.Sadeghipour L.Pileggi andM.Asheghi Proc. 11th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems May 28–31 2008 p. 1046.
11. Cahill D. G. · Rev. Sci. Instrum. · 1990 · 61 · 210.1063/1.1141498 ↗
12. 10.1021/je800770s10.1021/je800770s ↗
13. 10.1063/1.272138910.1063/1.2721389 ↗
14. 10.1143/JJAP.49.10120110.1143/JJAP.49.101201 ↗
15. 10.1016/S0040-6090(99)01090-110.1016/S0040-6090(99)01090-1 ↗
16. 10.1063/1.135318910.1063/1.1353189 ↗
17. 10.1063/1.36392310.1063/1.363923 ↗
18. C.Kittel Introduction to Solid State Physics 8th ed. (John Wiley & Sons New York 2005).
19. 10.1063/1.165918910.1063/1.1659189 ↗
20. 10.1063/1.328408410.1063/1.3284084 ↗
21. 10.1103/PhysRevB.7.537910.1103/PhysRevB.7.5379 ↗
22. 10.1103/PhysRevB.10.341210.1103/PhysRevB.10.3412 ↗
23. 10.1063/1.475101810.1063/1.4751018 ↗
24. 10.1103/PhysRevB.46.613110.1103/PhysRevB.46.6131 ↗
25. Singh A. K. · Chalcogenide Lett. · 2006 · 3 · 139
26. 10.1016/j.jnoncrysol.2008.10.01410.1016/j.jnoncrysol.2008.10.014 ↗
27. 10.1103/PhysRevB.86.10430110.1103/PhysRevB.86.104301 ↗
28. 10.1063/1.357436610.1063/1.3574366 ↗