Resistive Switching Characteristics of Fullerene (C60) in Polymannose Thin Film

The effects of C60 incorporated in polymannose‐based resistive switching memory have been systematically investigated for the first time in bioorganic‐based resistive switching memory. C60 with different concentrations (0–7 wt%) is dispersed in polymannose precursor, drop‐casted on ITO/PET substrate, and dried to form a thin film. Electrochemically inert Au–Pd is used as top electrode. The devices with embedded C60 show better endurance and stability. Read memory window decreases and ON/OFF ratio increases as the concentration of C60 increases. Stable retention time up to 10 years is achieved for all of the devices except the one with 7 wt% C60. Based on zeta potential measurement, polymannose is more negatively charged than C60. Hence, C60 functions as an effective interlock that bridges between long molecular chains of polymannose and enhances the resistive switching properties of the polymannose thin film.