Large area mapping of the alloy composition of Alx Ga1–xN using infrared reflectivity
Source abstract
Abstract
Abstract The energy position of a dip observed in the IR‐reflectance spectra recorded from wurtzite c ‐plane Alx Ga1–xN epitaxial films grown on SiC substrate reflects the composition of the alloy. A calibration procedure is presented with the possibility of mapping for large area wafer. The technique is non‐destructive, scalable and fast. The limitations are discussed and comparisons with other techniques are made. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Source: crossref · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Thin-Film Transistor Technologies · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. 10.1016/j.tsf.2008.04.06910.1016/j.tsf.2008.04.069 ↗
2. 10.1016/j.jcrysgro.2008.07.07610.1016/j.jcrysgro.2008.07.076 ↗
3. 10.1063/1.137266110.1063/1.1372661 ↗
4. 10.1103/PhysRevB.65.12520310.1103/PhysRevB.65.125203 ↗
5. 10.1063/1.36307210.1063/1.363072 ↗
6. 10.1366/000370297194033210.1366/0003702971940332 ↗
7. 10.4028/www.scientific.net/MSF.483-485.6110.4028/www.scientific.net/MSF.483-485.61 ↗
8. 10.1007/BF0134968010.1007/BF01349680 ↗
9. 10.1103/PhysRevB.63.12531310.1103/PhysRevB.63.125313 ↗
10. 10.1063/1.10859510.1063/1.108595 ↗
11. 10.1134/1.164943810.1134/1.1649438 ↗