DataVXphysica status solidi (RRL) – Rapid Research LettersPaper
journal article·2013-11

Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy

Bram Hoex, Michel Bosman, Naomi Nandakumar, W. M. M. Kessels

physica status solidi (RRL) – Rapid Research Letters· Volume 7· Issue 11
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Source abstract

Abstract

Abstract The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially‐resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as‐deposited and annealed Al2O3 films grown on c‐Si substrates by plasma‐assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2‐like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c‐Si surface passivation by Al2O3. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context

Materials processing

OpenAlex topics: Semiconductor materials and devices · Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis

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