DataVXphysica status solidi (RRL) – Rapid Research LettersPaper
journal article·2021-03Open access

Evolution of Low‐Frequency Vibrational Modes in Ultrathin GeSbTe Films

Eugenio Zallo, Daniele Dragoni, Yuliya Zaytseva, Stefano Cecchi, Nikolai I. Borgardt, Marco Bernasconi, Raffaella Calarco

physica status solidi (RRL) – Rapid Research Letters· Volume 15· Issue 3
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Abstract

In article number 2000434, Eugenio Zallo and co-workers report a methodology based on the Raman technique for the measurement of the layer number in ultrathin GeSbTe films obtained by molecular beam epitaxy. The experimental and theoretical evolution of the in-plane low-frequency vibrational modes of Ge2Sb2Te5 from bulk down to a single lamella is demonstrated. The energy shift is mainly related to the weak van der Waals interactions between the layers.
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Optical and Acousto-Optic Technologies

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Affiliations

Paul‐Drude‐Institut für Festkörperelektronik Leibniz‐Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5‐7 D‐10117 Berlin Germany

Department of Materials Science University of Milano‐Bicocca via R. Cozzi 55 20125 Milano Italy

Electron Microscopy Lab. National Research University of Electronic Technology (MIET) Zelenograd 124498 Moscow Russia

CNR Institute for Microelectronics and Microsystems–IMM Consiglio Nazionale delle Ricerche Via del Fosso del Cavaliere 100 00133 Roma Italy

References

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