On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications
Source abstract
Abstract
Among phase-change materials, Ge-rich GeSbTe “alloys” show superior properties that make them suitable for embedded memory applications. In article number 2000471, Alain Claverie and co-workers show that these properties result from their tendency to separate and eventually crystallize into distinct Ge and GST phases. Both mechanisms are limited by Ge diffusion and may be slowed down by impurities such as nitrogen. Transport characteristics result from the possible percolation of carriers through these two-phase materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
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Affiliations
CEMES-CNRS 29 Rue Jeanne Marvig 31055 Toulouse France
LPCNO—Laboratoire de Physique et Chimie des Nano-objets 135 Avenue de Rangueil 31077 Toulouse France
STMicroelectronics 850 Rue Jean Monnet 38920 Crolles France
References
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