journal article·2012-04

High‐temperature thermoelectric properties of Cu2In4Te7

Theerayuth Plirdpring, Ken Kurosaki, Atsuko Kosuga, Manabu Ishimaru, Yuji Ohishi, Hiroaki Muta, Shinsuke Yamanaka

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Abstract

Abstract Cu2Ga4Te7 has recently been reported to have a relatively high thermoelectric (TE) figure of merit (ZT). However, the TE properties of Cu2In4Te7, which has the same defect zinc‐blende structure as Cu2Ga4Te7, have been hardly investigated. Here, we demonstrate that Cu2In4Te7 has relatively high ZT values that are similar to those of Cu2Ga4Te7. High‐density polycrystalline bulk samples of Cu2In4Te7 were prepared and their electrical resistivity (ϱ), Seebeck coefficient (S), and thermal conductivity (κ) were measured. Cu2In4Te7 has a maximum ZT of 0.3 at 700 K, with ϱ, S, and κ values of 62.1 × 10–5 Ω m, 394 μV K–1, and 0.61 W m–1 K–1, respectively. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Thermal Expansion and Ionic Conductivity

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