Recent and forthcoming publications in pss: Phys. Status Solidi RRL 11/2013
Source abstract
Abstract
Needleman et al. outline and validate a low-cost approach for dislocation-density quantification in silicon, involving a highresolution commercial dark-field imaging device -a flatbed scanner. This method requires minimal surface preparation and can be performed on as-cut 15.6 15.6 cm 2 wafers in less than five minutes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Electron Microscopy Techniques and Applications · Silicon and Solar Cell Technologies · Microstructure and mechanical properties
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References
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